Transport Simulation in Microelectronics

Transport Simulation in Microelectronics
Author: Alfred Kersch
Publisher: Birkhäuser
Total Pages: 235
Release: 2012-12-06
Genre: Mathematics
ISBN: 303489080X

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Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad dresses three general areas of simulation which frequently arise in semicon ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.

Modelling of Interface Carrier Transport for Device Simulation

Modelling of Interface Carrier Transport for Device Simulation
Author: Dietmar Schroeder
Publisher: Springer Science & Business Media
Total Pages: 234
Release: 2013-03-09
Genre: Technology & Engineering
ISBN: 3709166446

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This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.

The Monte Carlo Method for Semiconductor Device Simulation

The Monte Carlo Method for Semiconductor Device Simulation
Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
Total Pages: 370
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3709169631

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This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Computational Electronics

Computational Electronics
Author: Karl Hess
Publisher: Springer Science & Business Media
Total Pages: 273
Release: 2013-03-14
Genre: Technology & Engineering
ISBN: 1475721242

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Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.

Stochastic Approaches to Electron Transport in Micro- and Nanostructures

Stochastic Approaches to Electron Transport in Micro- and Nanostructures
Author: Mihail Nedjalkov
Publisher: Springer Nature
Total Pages: 214
Release: 2021-04-05
Genre: Mathematics
ISBN: 3030679179

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The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices. Regarding the models, the historical evolution path, beginning from the classical charge carrier transport models for microelectronics to current quantum-based nanoelectronics, is explicatively followed. Accordingly, the solution methods are elucidated from the early phenomenological single particle algorithms applicable for stationary homogeneous physical conditions up to the complex algorithms required for quantum transport, based on particle generation and annihilation. The book fills the gap between monographs focusing on the development of the theory and the physical aspects of models, their application, and their solution methods and monographs dealing with the purely theoretical approaches for finding stochastic solutions of Fredholm integral equations.

Transport Simulation

Transport Simulation
Author: Edward Chung
Publisher: CRC Press
Total Pages: 209
Release: 2019-05-07
Genre: Science
ISBN: 042952613X

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In recent years, the transport simulation of large road networks has become far more rapid and detailed, and many exciting developments in this field have emerged. Within this volume, the authors describe the simulation of automobile, pedestrian, and rail traffic coupled to new applications, such as the embedding of traffic simulation into driving simulators, to give a more realistic environment of driver behavior surrounding the subject vehicle. New approaches to traffic simulation are described, including the hybrid mesoscopic-microscopic model and floor-field agent-based simulation. Written by an invited panel of experts, this book addresses students, engineers, and scholars, as well as anyone who needs a state-of-the-art overview of transport simulation today.

Analysis of Charge Transport

Analysis of Charge Transport
Author: Joseph W. Jerome
Publisher: Springer Science & Business Media
Total Pages: 177
Release: 2012-12-06
Genre: Mathematics
ISBN: 3642799876

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This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.

Computational Electronics

Computational Electronics
Author: Dragica Vasileska
Publisher: CRC Press
Total Pages: 782
Release: 2017-12-19
Genre: Technology & Engineering
ISBN: 1420064843

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Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.

Monte Carlo Simulation of Semiconductor Devices

Monte Carlo Simulation of Semiconductor Devices
Author: C. Moglestue
Publisher: Springer Science & Business Media
Total Pages: 343
Release: 2013-04-17
Genre: Computers
ISBN: 9401581339

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Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.