A System for Low-temperature Measurements of Thermal Conductivity

A System for Low-temperature Measurements of Thermal Conductivity
Author: Ronald J. Holyer
Publisher:
Total Pages: 112
Release: 1965
Genre: Heat
ISBN:

Download A System for Low-temperature Measurements of Thermal Conductivity Book in PDF, Epub and Kindle

A system has been designed and constructed to measure thermal conductivity by the series comparative method in the temperature range 4 to 300K. A sample temperature of 77K was reached when the cylindrical sample chamber 3-1/4 inches in diameter and 8-3/4 inches long was evacuated to a pressure of 0.000003 Torr and submerged in a bath of liquid nitrogen held in a 5-1/2 liter stainlesssteel dewar. Temperatures as low as 4.2K could be obtained if the sample chamber were submerged in liquid helium. Temperatures between that of the liquid bath and room temperature were obtained by electrical heating. A simple Wheatstone bridge circuit, one arm of which was a copper resistance thermometer made from 140 ohms of B and S No. 36 copper wire, served to regulate automatically the electrical heating so as to give a drift in sample temperature of less than 0.002 deg/min. Measurements were attempted from 77K to 300K on a sample of n-type single-crystal silicon with an impurity concentration of 5X10 to the 15th power cu cm. Armco iron was used as a standard. Temperatures were measured with copper vs constantan thermocouples. The thermal conductivity of the sample was found to range from 8.7 watt/cm-degK at 98K to 1.8 watt/cm-degK at 255K. These values agree with those of Carruthers et al. Within 7% and of Glassbrenner and Slack within 10%. (Author).

Porous Silicon: From Formation to Application: Formation and Properties, Volume One

Porous Silicon: From Formation to Application: Formation and Properties, Volume One
Author: Ghenadii Korotcenkov
Publisher: CRC Press
Total Pages: 429
Release: 2016-04-21
Genre: Science
ISBN: 1482264552

Download Porous Silicon: From Formation to Application: Formation and Properties, Volume One Book in PDF, Epub and Kindle

Porous silicon is rapidly attracting increasing interest in various fields, including optoelectronics, microelectronics, photonics, medicine, chemistry, biosensing, and energy. Porous Silicon: Formation and Properties fills a gap in the literature of the field today, providing a thorough introduction to current knowledge of the formation, processin

Semiconductor Nanolasers

Semiconductor Nanolasers
Author: Qing Gu
Publisher: Cambridge University Press
Total Pages: 333
Release: 2017-02-16
Genre: Technology & Engineering
ISBN: 1316982696

Download Semiconductor Nanolasers Book in PDF, Epub and Kindle

This unique resource explains the fundamental physics of semiconductor nanolasers, and provides detailed insights into their design, fabrication, characterization, and applications. Topics covered range from the theoretical treatment of the underlying physics of nanoscale phenomena, such as temperature dependent quantum effects and active medium selection, to practical design aspects, including the multi-physics cavity design that extends beyond pure electromagnetic consideration, thermal management and performance optimization, and nanoscale device fabrication and characterization techniques. The authors also discuss technological applications of semiconductor nanolasers in areas such as photonic integrated circuits and sensing. Providing a comprehensive overview of the field, detailed design and analysis procedures, a thorough investigation of important applications, and insights into future trends, this is essential reading for graduate students, researchers, and professionals in optoelectronics, applied photonics, physics, nanotechnology, and materials science.

Thermal Conductivity Measurements of Summit Polycrystalline Silicon

Thermal Conductivity Measurements of Summit Polycrystalline Silicon
Author: Jaron D. Kuppers
Publisher:
Total Pages: 48
Release: 2006
Genre:
ISBN:

Download Thermal Conductivity Measurements of Summit Polycrystalline Silicon Book in PDF, Epub and Kindle

A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.