Theoretical Study Of Electron Mobility In Modulation Doped Aluminum Gallium Arsenide
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Author | : Benjamin Segall |
Publisher | : |
Total Pages | : 16 |
Release | : 1983 |
Genre | : Gallium |
ISBN | : |
Download Theoretical Study of Electron Mobility in Modulation-doped Aluminum Gallium Arsenide Book in PDF, Epub and Kindle
Author | : Benjamin Segall |
Publisher | : |
Total Pages | : 9 |
Release | : 1983 |
Genre | : |
ISBN | : |
Download Theoretical Study of Electron Mobility in Modulation-doped Aluminium Gallium Arsenide - Gallium Arsenide Book in PDF, Epub and Kindle
Author | : Benjamin Segall |
Publisher | : |
Total Pages | : 16 |
Release | : 1983 |
Genre | : Gallium |
ISBN | : |
Download Theoretical Study of Electron Mobility in Modulation-doped Aluminum Gallium Arsenide Book in PDF, Epub and Kindle
Author | : |
Publisher | : |
Total Pages | : 416 |
Release | : 1983 |
Genre | : Astronautics |
ISBN | : |
Download NASA Technical Paper Book in PDF, Epub and Kindle
Author | : Mark Robert Keever |
Publisher | : |
Total Pages | : 432 |
Release | : 1983 |
Genre | : |
ISBN | : |
Download Experimental Studies of Lateral Electron Transport in Gallium Arsenide-aluminum Gallium Arsenide Heterostructures Book in PDF, Epub and Kindle
The electron-transport characteristics of modulation-doped GaAs-A1xGa1-xAs heterostructures have been measured over a wide range of temperatures using a diverse set of device structures. Short voltage pulses were used to apply a broad range of lateral (parallel to the interface) electric fields and the resulting current-field characteristics were determined using a sampling oscilloscope and x-y recorder. It was observed that the high electron mobility in these structures initially increased as the electric field was increased from zero. The low-field mobility reached a maximum at fields below 500 V/cm and then dropped quickly at low temperatures for increasingly higher electric fields. At higher temperatures (200 K to 300 K) there was comparatively little change in the mobility for fields up to 2 kV/cm. For higher fields (above 2 kV/cm) it was found that the electrons could gain enough energy to be thermionically emitted over the conduction-band discontinuity from the high-mobility GaAs to the low-mobility A1GaAs. This real-space transfer (RST) of electrons resulted in current saturation or various degrees of negative differential resistance (NDR) in the samples being studied. It was demonstrated that the new real-space transfer mechanism could be used in the creation of fast electron switching and storage devices and also high-frequency oscillators.
Author | : Anthony Joseph Valois |
Publisher | : |
Total Pages | : 398 |
Release | : 1985 |
Genre | : |
ISBN | : |
Download An Investigation of Deep Levels in Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Heterojunction Structures Book in PDF, Epub and Kindle
Author | : David Constantine Radulescu |
Publisher | : |
Total Pages | : 578 |
Release | : 1988 |
Genre | : Doped semiconductors |
ISBN | : |
Download Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures Book in PDF, Epub and Kindle
Author | : |
Publisher | : |
Total Pages | : 780 |
Release | : 1984 |
Genre | : Government publications |
ISBN | : |
Download Monthly Catalog of United States Government Publications Book in PDF, Epub and Kindle
Author | : Sadao Adachi |
Publisher | : IET |
Total Pages | : 354 |
Release | : 1993 |
Genre | : Aluminium alloys |
ISBN | : 9780852965580 |
Download Properties of Aluminium Gallium Arsenide Book in PDF, Epub and Kindle
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author | : |
Publisher | : |
Total Pages | : 16 |
Release | : 1983 |
Genre | : Science |
ISBN | : |
Download NASA Technical Paper Book in PDF, Epub and Kindle