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| Author | : Paula Jean Grunthaner |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 1983 |
| Genre | : |
| ISBN | : |
| Author | : Norbert Koch |
| Publisher | : John Wiley & Sons |
| Total Pages | : 257 |
| Release | : 2013-02-08 |
| Genre | : Science |
| ISBN | : 3527653198 |
Reviewing recent progress in the fundamental understanding of the molecule-metal interface, this useful addition to the literature focuses on experimental studies and introduces the latest analytical techniques as applied to this interface. The first part covers basic theory and initial principle studies, while the second part introduces readers to photoemission, STM, and synchrotron techniques to examine the atomic structure of the interfaces. The third part presents photoelectron spectroscopy, high-resolution UV photoelectron spectroscopy and electron spin resonance to study the electronic structure of the molecule-metal interface. In the closing chapter the editors discuss future perspectives. Written as a senior graduate or senior undergraduate textbook for students in physics, chemistry, materials science or engineering, the book's interdisciplinary approach makes it equally relevant for researchers working in the field of organic and molecular electronics.
| Author | : Akio Hiraki |
| Publisher | : IOS Press |
| Total Pages | : 422 |
| Release | : 1995 |
| Genre | : Technology & Engineering |
| ISBN | : 9784274900396 |
| Author | : |
| Publisher | : |
| Total Pages | : 480 |
| Release | : 1993 |
| Genre | : Aeronautics |
| ISBN | : |
| Author | : B.L. Sharma |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 379 |
| Release | : 2013-11-11 |
| Genre | : Science |
| ISBN | : 146844655X |
The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
| Author | : Joseph Woicik |
| Publisher | : Springer |
| Total Pages | : 576 |
| Release | : 2015-12-26 |
| Genre | : Science |
| ISBN | : 3319240439 |
This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.
| Author | : Winfried Mönch |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 269 |
| Release | : 2013-04-17 |
| Genre | : Technology & Engineering |
| ISBN | : 3662069458 |
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
| Author | : Oliver Diwald |
| Publisher | : John Wiley & Sons |
| Total Pages | : 903 |
| Release | : 2021-09-14 |
| Genre | : Technology & Engineering |
| ISBN | : 1119436745 |
Metal Oxide Nanoparticles A complete nanoparticle resource for chemists and industry professionals Metal oxide nanoparticles are integral to a wide range of natural and technological processes—from mineral transformation to electronics. Additionally, the fields of engineering, electronics, energy technology, and electronics all utilize metal oxide nanoparticle powders. Metal Oxide Nanoparticles: Formation, Functional Properties, and Interfaces presents readers with the most relevant synthesis and formulation approaches for using metal oxide nanoparticles as functional materials. It covers common processing routes and the assessment of physical and chemical particle properties through comprehensive and complementary characterization methods. This book will serve as an introduction to nanoparticle formulation, their interface chemistry and functional properties at the nanoscale. It will also act as an in-depth resource, sharing detailed information on advanced approaches to the physical, chemical, surface, and interface characterization of metal oxide nanoparticle powders and dispersions. Addresses the application of metal oxide nanoparticles and its economic impact Examines particle synthesis, including the principles of selected bottom-up strategies Explores nanoparticle formulation—a selection of processing and application routes Discusses the significance of particle surfaces and interfaces on structure formation, stability and functional materials properties Covers metal oxide nanoparticle characterization at different length scales With this valuable resource, academic researchers, industrial chemists, and PhD students can all gain insight into the synthesis, properties, and applications of metal oxide nanoparticles.
| Author | : Paul H. Holloway |
| Publisher | : Cambridge University Press |
| Total Pages | : 937 |
| Release | : 2008-10-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0080946143 |
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
| Author | : Carl Wilmsen |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 472 |
| Release | : 2013-06-29 |
| Genre | : Science |
| ISBN | : 1468448358 |
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
