Systematic Analysis of Bipolar and MOS Transistors

Systematic Analysis of Bipolar and MOS Transistors
Author: Uğur Çilingiroğlu
Publisher: Artech House Materials Science
Total Pages: 256
Release: 1993
Genre: Technology & Engineering
ISBN:

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Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.

Bipolar and Bipolar-MOS Integration

Bipolar and Bipolar-MOS Integration
Author: P. A. H. Hart
Publisher: North Holland
Total Pages: 484
Release: 1994
Genre: Computers
ISBN:

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This book deals with the physics and technology aspects of monolytic integration of bipolar transistors and mixed integration of bipolar and MOS transistors. Bipolar technology is an "old" discipline which is now gaining renewed interest as the success of the IEEE bipolar transistor conference BCTM clearly illustrates. As well as providing extensive coverage of this subject, Bipolar and Bipolar-MOS Integration can be used as a handbook for those working in more specialized areas, to acquire access to related fields. Some tutorial paragraphs have been included that will be of particular interest to those new to the subject.The book will be of significant value to those working in the electronic industry, researchers or developers of integrated circuitry and university students.

Analysis and Synthesis of MOS Translinear Circuits

Analysis and Synthesis of MOS Translinear Circuits
Author: Remco J. Wiegerink
Publisher: Springer Science & Business Media
Total Pages: 167
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461532140

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This book has its roots in an idea first formulated by Barrie Gilbert in 1975. He showed how bipolar analog circuits can realize nonlinear and computational functions. This extended the analog art from linear to nonlinear applications, hence the name trans linear circuits. Not only did this new principle enable marvellous signal processing functions to be accurately implemented, but also the circuits were simple and practical. The perennial problems of analog Ie design, namely temperature sensitivity, processing spread, device nonlinearity and paracitic capacitance were solved to a large extent. Using the trans linear principle in circuit design requires changing your point of view in two ways. First, the grossly nonlinear characteristic of transistors is viewed as an asset rather than as a harmful property. Second, no longer are the signals represented by voltages, but by currents. In fact, the attendant voltage changes are distorted but, as they are very small, they are only of secondary interest. Understanding and analyzing a given trans linear circuit is fairly straightforward. But what about the converse situation: suppose you're given some nonlinear or computational function to implement? How to find a suitable translinear circuit realization? The general problem of analog circuit synthesis is a difficult one and is receiving much attention nowadays. Some years ago, I had the opportunity to investigate methods for designing bipolar trans linear circuits. It turned out that translinear networks have some unique topological properties. Using these properties it was possible to establish heuristic synthesis procedures.

Bipolar and MOS Analog Integrated Circuit Design

Bipolar and MOS Analog Integrated Circuit Design
Author: Alan B. Grebene
Publisher: Wiley-Interscience
Total Pages: 920
Release: 1984-01-23
Genre: Technology & Engineering
ISBN:

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A practical, engineering book discussing the most modern and general techniques for designing analog integrated circuits which are not digital (excluding computer circuits). Covers the basics of the devices, manufacturing technology, design procedures, shortcuts, and analytic techniques. Includes examples and illustrations of the best current practice.

Bipolar transistor and MOSFET device models

Bipolar transistor and MOSFET device models
Author: Kunihiro Suzuki
Publisher: Bentham Science Publishers
Total Pages: 587
Release: 2016-03-02
Genre: Science
ISBN: 1681082616

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Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.

MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems

MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems
Author: Rolf Unbehauen
Publisher: Springer Science & Business Media
Total Pages: 645
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3642836771

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The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology. MOS technology is becoming dominant in the realization of digital systems, and its use for analog circuits opens new pos sibilities for the design of complex mixed analog/digital VLSI (very large scale in tegration) chips. Although we are focusing attention in this book principally on circuits and systems which can be implemented in CMOS technology, many con siderations and structures are of a general nature and can be adapted to other promising and emerging technologies, namely GaAs (Gallium Arsenide) and BI MOS (bipolar MOS, i. e. circuits which combine both bipolar and CMOS devices) technology. Moreover, some of the structures and circuits described in this book can also be useful without integration. In this book we describe two large classes of analog integrated circuits: • switched capacitor (SC) networks, • continuous-time CMOS (unswitched) circuits. SC networks are sampled-data systems in which electric charges are transferred from one point to another at regular discrete intervals of time and thus the signal samples are stored and processed. Other circuits belonging to this class of sampled-data systems are charge transfer devices (CTD) and charge coupled dev ices (CCD). In contrast to SC circuits, continuous-time CMOS circuits operate continuously in time. They can be considered as subcircuits or building blocks (e. g.

Compact Hierarchical Bipolar Transistor Modeling with Hicum

Compact Hierarchical Bipolar Transistor Modeling with Hicum
Author: Michael Schr”ter
Publisher: World Scientific
Total Pages: 753
Release: 2010
Genre: Technology & Engineering
ISBN: 981427321X

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Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.

Heterojunction Bipolar Transistors for Circuit Design

Heterojunction Bipolar Transistors for Circuit Design
Author: Jianjun Gao
Publisher: John Wiley & Sons
Total Pages: 280
Release: 2015-04-27
Genre: Technology & Engineering
ISBN: 1118921542

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A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

High-Frequency Bipolar Transistors

High-Frequency Bipolar Transistors
Author: Michael Reisch
Publisher: Springer Science & Business Media
Total Pages: 671
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 364255900X

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This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.