We have investigated the synthesis of carbon-silicon-nitride compounds by ion implantation. In these experiments, 100 keV nitrogen ions were implanted into polycrystalline [beta]-SiC (cubic phase) at various substrate temperatures and ion doses. These thin films were characterized by x-ray diffraction with a position-sensitive detector, transmission electron microscopy with chemical analysis, and Rutherford backscattering spectroscopy. The as-implanted samples show a buried amorphous layer at a depth of 170 nm. Peak concentration of nitrogen saturates at approximately 45 at. % with doses above [approximately] 9.0 [times] 10[sup 17] N/cm[sup 2] at 860[degree]C. These results suggest formation of a new phase by nitrogen implantation into [beta]-SiC.