Study of Surface Quantum Wells in InSb/AlInSb Heterostructures

Study of Surface Quantum Wells in InSb/AlInSb Heterostructures
Author: Emma Annelise Bergeron
Publisher:
Total Pages: 59
Release: 2019
Genre: Compound semiconductors
ISBN:

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The strong spin orbit coupling and large Lande g-factor of InSb compared to the other III-V semiconductors makes InSb an ideal choice for potential use in topological quantum computing with Majorana fermions. Furthermore, two dimensional electron gases (2DEGs) in III-V materials offer a more scalable platform for topological quantum computing over nanowire networks. Despite their ideal properties, 2DEGs in InSb have not been exploited for the purpose of studying Majorana fermions due to outstanding materials development challenges. This thesis presents an investigation of InSb/AlInSb heterostructures including surface quantum wells and standard high electron mobility transistor (HEMT) heterostructures. Development of fabrication methods and techniques is discussed for each system. Transport is characterized through mangetotransport measurements including quantum Hall effect and Shubnikov de-Haas oscillations. We extract carrier densities and mobilities for a series of wafers of varying doping densities. Gated structures allow further modulation of the carrier density and characterization of the effectiveness of gating is reported.

Semiconductor Materials for Optoelectronics and LTMBE Materials

Semiconductor Materials for Optoelectronics and LTMBE Materials
Author: J.P. Hirtz
Publisher: Elsevier
Total Pages: 365
Release: 2016-07-29
Genre: Science
ISBN: 1483290425

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These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Physics and Applications of Quantum Wells and Superlattices

Physics and Applications of Quantum Wells and Superlattices
Author: E.E. Mendez
Publisher: Springer Science & Business Media
Total Pages: 456
Release: 2012-12-06
Genre: Science
ISBN: 1468454781

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This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.

Antimonide-Related Strained-Layer Heterostructures

Antimonide-Related Strained-Layer Heterostructures
Author: M. O. Manasreh
Publisher: CRC Press
Total Pages: 526
Release: 2019-08-16
Genre: Technology & Engineering
ISBN: 1000725308

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Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.

Strained-Layer Quantum Wells and Their Applications

Strained-Layer Quantum Wells and Their Applications
Author: M. O. Manasreh
Publisher: CRC Press
Total Pages: 606
Release: 1997-12-23
Genre: Science
ISBN: 9789056995676

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Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.

Quantum Wells, Wires and Dots

Quantum Wells, Wires and Dots
Author: Paul Harrison
Publisher: John Wiley & Sons
Total Pages: 511
Release: 2005-10-31
Genre: Science
ISBN: 0470010819

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Quantum Wells, Wires and Dots Second Edition: Theoretical andComputational Physics of Semiconductor Nanostructures providesall the essential information, both theoretical and computational,for complete beginners to develop an understanding of how theelectronic, optical and transport properties of quantum wells,wires and dots are calculated. Readers are lead through a series ofsimple theoretical and computational examples giving solidfoundations from which they will gain the confidence to initiatetheoretical investigations or explanations of their own. Emphasis on combining the analysis and interpretation ofexperimental data with the development of theoretical ideas Complementary to the more standard texts Aimed at the physics community at large, rather than just thelow-dimensional semiconductor expert The text present solutions for a large number of realsituations Presented in a lucid style with easy to follow steps related toaccompanying illustrative examples

Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials

Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials
Author: Hans D. Hochheimer
Publisher: Springer Science & Business Media
Total Pages: 556
Release: 2012-12-06
Genre: Science
ISBN: 9401005206

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In recent interactions with industrial companies it became quite obvious, that the search for new materials with strong anisotropic properties are of paramount importance for the development of new advanced electronic and magnetic devices. The questions concerning the tailoring of materials with large anisotropic electrical and thermal conductivity were asked over and over again. It became also quite clear that the chance to answer these questions and to find new materials which have these desired properties would demand close collaborations between scientists from different fields. Modem techniques ofcontrolled materials synthesis and advances in measurement and modeling have made clear that multiscale complexity is intrinsic to complex electronic materials, both organic and inorganic. A unified approach to classes of these materials is urgently needed, requiring interdisciplinary input from chemistry, materials science, and solid state physics. Only in this way can they be controlled and exploited for increasingly stringent demands oftechnology. The spatial and temporal complexity is driven by strong, often competing couplings between spin, charge and lattice degrees offreedom, which determine structure-function relationships. The nature of these couplings is a sensitive function of electron-electron, electron-lattice, and spin-lattice interactions; noise and disorder, external fields (magnetic, optical, pressure, etc. ), and dimensionality. In particular, these physical influences control broken-symmetry ground states (charge and spin ordered, ferroelectric, superconducting), metal-insulator transitions, and excitations with respect to broken-symmetries created by chemical- or photo-doping, especially in the form of polaronic or excitonic self-trapping.

Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology
Author:
Publisher: Newnes
Total Pages: 3572
Release: 2011-01-28
Genre: Science
ISBN: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE)
Author: Stuart Irvine
Publisher: John Wiley & Sons
Total Pages: 582
Release: 2019-10-07
Genre: Technology & Engineering
ISBN: 1119313015

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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).