Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy

Study of III-nitride Growth Kinetics by Molecular-beam Epitaxy
Author: Michael William Moseley
Publisher:
Total Pages:
Release: 2013
Genre: Molecular beam epitaxy
ISBN:
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Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous amount of interest because of its properties and applications in both electronics and optoelectronics. Although blue light-emitting diodes have been commercialized based on this success, much less progress has been made in ultraviolet emitters, green emitters, and photovoltaics. This lack of development has been attributed to insufficient structural and electrical material quality, which is directly linked to the growth of the material. The objective of this work is to expand the understanding of III-nitride growth towards the improvement of current device capabilities and the facilitation of novel device designs. :Group-III nitride thin films are grown by molecular-beam epitaxy in a pulsed, metal-rich environment. The growths of nitride binaries and ternaries are observed in situ by transient reflection high-energy electron diffraction (RHEED) intensities, which respond to the behavior of atoms on the growing surface. By analyzing and interpreting these RHEED signatures, a comprehensive understanding of nitride thin film growth is obtained. :The growth kinetics of unintentionally doped GaN by metal-rich MBE are elucidated, and a novel method of in situ growth rate measurement is discovered. This technique is expanded to InN, highlighting the similarity in molecular-beam epitaxy growth kinetics between III-nitride binaries. The growth of Mg-doped GaN is then explored to increase Mg incorporation and electrical activation. The growth of InxGa1-xN alloys are investigated with the goal of eliminating phase separation, which enables single-phase material for use in photovoltaics. Finally, the growth of unintentionally doped and Mg-doped AlGaN is investigated towards higher efficiency light emitting diodes. :These advancements in the understanding of III-nitride growth will address several critical problems and enable devices relying on consistent growth in production, single-phase material, and practical hole concentrations in materials with high carrier activation energies.

Epitaxial Growth of III-Nitride Compounds

Epitaxial Growth of III-Nitride Compounds
Author: Takashi Matsuoka
Publisher: Springer
Total Pages: 228
Release: 2018-04-17
Genre: Technology & Engineering
ISBN: 3319766414
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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Molecular Beam Epitaxy

Molecular Beam Epitaxy
Author: Mohamed Henini
Publisher: Elsevier
Total Pages: 790
Release: 2018-06-27
Genre: Science
ISBN: 0128121378
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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Real-time Synchrotron X-ray Studies of III-V Nitride Growth

Real-time Synchrotron X-ray Studies of III-V Nitride Growth
Author: Yiyi Wang
Publisher:
Total Pages: 131
Release: 2007
Genre:
ISBN: 9781109976786
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A unique ultra-high vacuum growth chamber for these experiments was designed and constructed by our group. I have set up and optimized the system for thin film growth by molecular beam epitaxy. The real-time x-ray studies facility consists of a base diffractometer and an ultra-high vacuum chamber with processing and analysis instrumentation.

III-nitride Semiconductors Grown by Plasma Assisted Molecular Beam Epitaxy

III-nitride Semiconductors Grown by Plasma Assisted Molecular Beam Epitaxy
Author: Lei He
Publisher:
Total Pages:
Release: 2004
Genre: Molecular beam epitaxy
ISBN:
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III-nitride semiconductors are of great interest owing to their commercial and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method owing to precise control of growth parameters, which significantly affect the film properties, composition, and thickness. However, the understanding of growth mechanism of III-nitride materials grown in this growth regime is far from being complete. In this dissertation, GaN and AIGaN growth mechanism under metal-rich conditions were investigated. The Ga surface desorption behavior during the growth was investigated systematically using reflection high-energy electron diffraction (RHEED). It was found that desorption of Ga atoms from the (0001) GaN surfaces under different III-V ratios deviates from the zero-order kinetics in that the desorption rate is independent of the coverage of adsorbed atoms. The desorption energies of Ga are determined to be 2.76 eV with the Ga coverage closing to 100%, 1.89 eV for a -45% coverage, and 0.82 eV for a 10% coverage, as monitored by the change of the RHEED specular beam intensity during growth. In addition, the GaN surface morphology under different III-V ratios on porous templates matches the dependence of Ga desorption energy on the metal coverage, and III/V ratio dominates the growth mode. In a related AIGaN growth mechanism study, a competition between A1 and Ga atoms to incorporate into the film was found under metal-rich conditions. Employing this mechanism, A1xGa1-xN layers with precisely controlled A1 mole fraction, x in the range 0

Dilute Nitride Semiconductors

Dilute Nitride Semiconductors
Author: Mohamed Henini
Publisher: Elsevier
Total Pages: 648
Release: 2004-12-15
Genre: Technology & Engineering
ISBN: 0080455999
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This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

III-nitride

III-nitride
Author: Zhe Chuan Feng
Publisher: Imperial College Press
Total Pages: 442
Release: 2006
Genre: Technology & Engineering
ISBN: 1860949037
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III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.

Iii-Nitride Devices and Nanoengineering

Iii-Nitride Devices and Nanoengineering
Author: Zhe Chuan Feng
Publisher: Imperial College Press
Total Pages: 477
Release: 2008
Genre: Technology & Engineering
ISBN: 1848162243
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Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.