Strain Effect in Semiconductors

Strain Effect in Semiconductors
Author: Yongke Sun
Publisher: Springer Science & Business Media
Total Pages: 353
Release: 2009-11-14
Genre: Technology & Engineering
ISBN: 1441905529

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Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Semiconductor Nanostructures

Semiconductor Nanostructures
Author: Dieter Bimberg
Publisher: Springer Science & Business Media
Total Pages: 369
Release: 2008-06-03
Genre: Technology & Engineering
ISBN: 3540778993

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Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.

Electron & Nuclear Spin Dynamics in Semiconductor Nanostructures

Electron & Nuclear Spin Dynamics in Semiconductor Nanostructures
Author: M. M. Glazov
Publisher: Oxford University Press
Total Pages: 320
Release: 2018-09-05
Genre: Science
ISBN: 0192534211

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In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.

Non-Equilibrium Dynamics of Semiconductors and Nanostructures

Non-Equilibrium Dynamics of Semiconductors and Nanostructures
Author: Kong-Thon Tsen
Publisher: CRC Press
Total Pages: 246
Release: 2018-10-03
Genre: Technology & Engineering
ISBN: 1351836927

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The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.

Advances in Semiconductor Nanostructures

Advances in Semiconductor Nanostructures
Author: Alexander V. Latyshev
Publisher: Elsevier
Total Pages: 553
Release: 2016-11-10
Genre: Technology & Engineering
ISBN: 0128105135

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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics
Author: Mohamed Henini
Publisher: Elsevier
Total Pages: 862
Release: 2011-07-28
Genre: Technology & Engineering
ISBN: 0080560474

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The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included. Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology. Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of Microelectronics Journal and has edited three previous Elsevier books. Contributors are world leaders in the field Brings together all the factors which are essential in self-organisation of quantum nanostructures Reviews the current status of research and development in self-organised nanostructured materials Provides a ready source of information on a wide range of topics Useful to any scientist who is involved in nanotechnology Excellent starting point for workers entering the field Serves as an excellent reference manual

CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications

CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications
Author:
Publisher: Elsevier
Total Pages: 430
Release: 2009-10-22
Genre: Science
ISBN: 0080914586

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Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT Review of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed