Stochastic Approaches to Electron Transport in Micro- and Nanostructures

Stochastic Approaches to Electron Transport in Micro- and Nanostructures
Author: Mihail Nedjalkov
Publisher: Springer Nature
Total Pages: 214
Release: 2021-04-05
Genre: Mathematics
ISBN: 3030679179
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The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices. Regarding the models, the historical evolution path, beginning from the classical charge carrier transport models for microelectronics to current quantum-based nanoelectronics, is explicatively followed. Accordingly, the solution methods are elucidated from the early phenomenological single particle algorithms applicable for stationary homogeneous physical conditions up to the complex algorithms required for quantum transport, based on particle generation and annihilation. The book fills the gap between monographs focusing on the development of the theory and the physical aspects of models, their application, and their solution methods and monographs dealing with the purely theoretical approaches for finding stochastic solutions of Fredholm integral equations.

75th Anniversary of the Transistor

75th Anniversary of the Transistor
Author: Arokia Nathan
Publisher: John Wiley & Sons
Total Pages: 469
Release: 2023-07-11
Genre: Technology & Engineering
ISBN: 1394202466
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75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Electron Transport in Nanostructures and Mesoscopic Devices

Electron Transport in Nanostructures and Mesoscopic Devices
Author: Thierry Ouisse
Publisher: John Wiley & Sons
Total Pages: 282
Release: 2013-03-01
Genre: Technology & Engineering
ISBN: 111862338X
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This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material systematically kept at the most accessible level. The various physical effects are clearly differentiated, ranging from transmission formalism to the Coulomb blockade effect and current noise fluctuations. Practical exercises and solutions have also been included to facilitate the reader's understanding.

Dissipative Quantum Mechanics of Nanostructures

Dissipative Quantum Mechanics of Nanostructures
Author: Andrei D. Zaikin
Publisher: CRC Press
Total Pages: 957
Release: 2019-05-24
Genre: Science
ISBN: 1000023664
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Continuing miniaturization of electronic devices, together with the quickly growing number of nanotechnological applications, demands a profound understanding of the underlying physics. Most of the fundamental problems of modern condensed matter physics involve various aspects of quantum transport and fluctuation phenomena at the nanoscale. In nanostructures, electrons are usually confined to a limited volume and interact with each other and lattice ions, simultaneously suffering multiple scattering events on impurities, barriers, surface imperfections, and other defects. Electron interaction with other degrees of freedom generally yields two major consequences, quantum dissipation and quantum decoherence. In other words, electrons can lose their energy and ability for quantum interference even at very low temperatures. These two different, but related, processes are at the heart of all quantum phenomena discussed in this book. This book presents copious details to facilitate the understanding of the basic physics behind a result and the learning to technically reproduce the result without delving into extra literature. The book subtly balances the description of theoretical methods and techniques and the display of the rich landscape of the physical phenomena that can be accessed by these methods. It is useful for a broad readership ranging from master’s and PhD students to postdocs and senior researchers.

Uncertainty Quantification of Stochastic Defects in Materials

Uncertainty Quantification of Stochastic Defects in Materials
Author: Liu Chu
Publisher: CRC Press
Total Pages: 210
Release: 2021-12-16
Genre: Technology & Engineering
ISBN: 1000506061
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Uncertainty Quantification of Stochastic Defects in Materials investigates the uncertainty quantification methods for stochastic defects in material microstructures. It provides effective supplementary approaches for conventional experimental observation with the consideration of stochastic factors and uncertainty propagation. Pursuing a comprehensive numerical analytical system, this book establishes a fundamental framework for this topic, while emphasizing the importance of stochastic and uncertainty quantification analysis and the significant influence of microstructure defects on the material macro properties. Key Features Consists of two parts: one exploring methods and theories and the other detailing related examples Defines stochastic defects in materials and presents the uncertainty quantification for defect location, size, geometrical configuration, and instability Introduces general Monte Carlo methods, polynomial chaos expansion, stochastic finite element methods, and machine learning methods Provides a variety of examples to support the introduced methods and theories Applicable to MATLAB® and ANSYS software This book is intended for advanced students interested in material defect quantification methods and material reliability assessment, researchers investigating artificial material microstructure optimization, and engineers working on defect influence analysis and nondestructive defect testing.