Download Resistive Switching In Transition Metal Oxides For Integrated Non Volatile Memory full books in PDF, epub, and Kindle. Read online free Resistive Switching In Transition Metal Oxides For Integrated Non Volatile Memory ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
| Author | : Sanjoy Kumar Nandi |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2017 |
| Genre | : |
| ISBN | : |
| Author | : Daniele Ielmini |
| Publisher | : |
| Total Pages | : 755 |
| Release | : 2016 |
| Genre | : TECHNOLOGY & ENGINEERING |
| ISBN | : 9783527680870 |
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
| Author | : Daniele Ielmini |
| Publisher | : John Wiley & Sons |
| Total Pages | : 1010 |
| Release | : 2015-12-23 |
| Genre | : Technology & Engineering |
| ISBN | : 3527680934 |
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
| Author | : Panagiotis Dimitrakis |
| Publisher | : Elsevier |
| Total Pages | : 534 |
| Release | : 2022-03-01 |
| Genre | : Technology & Engineering |
| ISBN | : 0128146303 |
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
| Author | : Lin Yang |
| Publisher | : Forschungszentrum Jülich |
| Total Pages | : 141 |
| Release | : 2011 |
| Genre | : |
| ISBN | : 3893367071 |
| Author | : |
| Publisher | : The Electrochemical Society |
| Total Pages | : 256 |
| Release | : 2011 |
| Genre | : Integrated circuits |
| ISBN | : 1566778999 |
| Author | : Irina Kärkkänen |
| Publisher | : Forschungszentrum Jülich |
| Total Pages | : 151 |
| Release | : 2014 |
| Genre | : |
| ISBN | : 3893369716 |
| Author | : Jennifer Rupp |
| Publisher | : Springer Nature |
| Total Pages | : 386 |
| Release | : 2021-10-15 |
| Genre | : Technology & Engineering |
| ISBN | : 3030424243 |
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
| Author | : F. Roozeboom |
| Publisher | : The Electrochemical Society |
| Total Pages | : 338 |
| Release | : 2015 |
| Genre | : |
| ISBN | : 1607685949 |
| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
