Sic Materials And Devices - Volume 1

Sic Materials And Devices - Volume 1
Author: Sergey Rumyantsev
Publisher: World Scientific
Total Pages: 342
Release: 2006-07-25
Genre: Technology & Engineering
ISBN: 981447777X

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After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Introduction to Organic Electronic and Optoelectronic Materials and Devices

Introduction to Organic Electronic and Optoelectronic Materials and Devices
Author: Sam-Shajing Sun
Publisher: CRC Press
Total Pages: 936
Release: 2008-05-29
Genre: Technology & Engineering
ISBN: 1420009192

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Reflecting rapid growth in research and development on organic/polymeric electronic and photonic materials and devices, Introduction to Organic Electronic and Optoelectronic Materials and Devices provides comprehensive coverage of the state-of-the-art in an accessible format. The book presents fundamentals, principles, and mechanisms complem

Handbook of Silicon Carbide Materials and Devices

Handbook of Silicon Carbide Materials and Devices
Author: Zhe Chuan Feng
Publisher: CRC Press
Total Pages: 465
Release: 2023-07-10
Genre: Science
ISBN: 0429583958

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This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

SiC Materials and Devices

SiC Materials and Devices
Author: Michael Shur
Publisher: World Scientific
Total Pages: 342
Release: 2006
Genre: Technology & Engineering
ISBN: 9812568352

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After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Power Semiconductor Materials and Devices: Volume 483

Power Semiconductor Materials and Devices: Volume 483
Author: S. J. Pearton
Publisher: Mrs Proceedings
Total Pages: 478
Release: 1997
Genre: Technology & Engineering
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Handbook of GaN Semiconductor Materials and Devices

Handbook of GaN Semiconductor Materials and Devices
Author: Wengang (Wayne) Bi
Publisher: CRC Press
Total Pages: 709
Release: 2017-10-20
Genre: Science
ISBN: 1498747140

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This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Reliability and Failure of Electronic Materials and Devices

Reliability and Failure of Electronic Materials and Devices
Author: Milton Ohring
Publisher: Academic Press
Total Pages: 759
Release: 2014-10-14
Genre: Technology & Engineering
ISBN: 0080575528

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Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites

Conducting Organic Materials and Devices

Conducting Organic Materials and Devices
Author: Suresh C. Jain
Publisher: Newnes
Total Pages: 199
Release: 2011-08-09
Genre: Technology & Engineering
ISBN: 0080549551

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Conducting polymers were discovered in 1970s in Japan. Since this discovery, there has been a steady flow of new ideas, new understanding, new conducing polymer (organics) structures and devices with enhanced performance. Several breakthroughs have been made in the design and fabrication technology of the organic devices. Almost all properties, mechanical, electrical, and optical, are important in organics. This book describes the recent advances in these organic materials and devices.