Download Physics Of Carrier Transport Mechanisms And Ultra Small Scale Phenomena For Theoretical Modelling Of Nanometer Mos Transistors From Diffusive To Ballistic Regimes Of Operation full books in PDF, epub, and Kindle. Read online free Physics Of Carrier Transport Mechanisms And Ultra Small Scale Phenomena For Theoretical Modelling Of Nanometer Mos Transistors From Diffusive To Ballistic Regimes Of Operation ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
| Author | : Vinod Kumar Khanna |
| Publisher | : |
| Total Pages | : 64 |
| Release | : 2004 |
| Genre | : |
| ISBN | : |
| Author | : Vinod Kumar Khanna |
| Publisher | : |
| Total Pages | : 64 |
| Release | : 2004 |
| Genre | : |
| ISBN | : |
| Author | : Abbass A. Hashim |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 554 |
| Release | : 2011-07-18 |
| Genre | : Science |
| ISBN | : 9533073187 |
This potentially unique work offers various approaches on the implementation of nanowires. As it is widely known, nanotechnology presents the control of matter at the nanoscale and nanodimensions within few nanometers, whereas this exclusive phenomenon enables us to determine novel applications. This book presents an overview of recent and current nanowire application and implementation research worldwide. We examine methods of nanowire synthesis, types of materials used, and applications associated with nanowire research. Wide surveys of global activities in nanowire research are presented, as well.
| Author | : Jean-Luc Autran |
| Publisher | : CRC Press |
| Total Pages | : 532 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 1351831550 |
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment—one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.
| Author | : Hideaki Tsuchiya |
| Publisher | : John Wiley & Sons |
| Total Pages | : 265 |
| Release | : 2017-06-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1118871723 |
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
| Author | : Mark Lundstrom |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 223 |
| Release | : 2006-06-18 |
| Genre | : Technology & Engineering |
| ISBN | : 0387280030 |
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
| Author | : Mark Lundstrom |
| Publisher | : World Scientific Publishing Company |
| Total Pages | : 0 |
| Release | : 2018 |
| Genre | : Metal oxide semiconductor field-effect transistors |
| ISBN | : 9789814571739 |
Overview -- The transistor as a black box -- The MOSFET: a barrier-controlled device -- MOSFET IV: traditional approach -- MOSFET IV: the virtual source model -- Poisson equation and the depletion approximation -- Gate voltage and surface potential -- Mobile charge: bulk MOS -- Mobile charge: extremely thin SOI -- 2D MOS electrostatics -- The VS model revisited -- The Landauer approach to transport -- The ballistic MOSFET -- The ballistic injection velocity -- Connecting the ballistic and VS models -- Carrier scattering and transmission -- Transmission theory of the MOSFET -- Connecting the transmission and VS models -- VS characterization of transport in nanotransistors -- Limits and limitations
| Author | : Vinod Kumar Khanna |
| Publisher | : Taylor & Francis |
| Total Pages | : 632 |
| Release | : 2016-04-19 |
| Genre | : Science |
| ISBN | : 1439827133 |
Bringing together widely scattered information, Nanosensors: Physical, Chemical, and Biological explores sensor development in the nanotechnology age. This easy-to-read book presents a critical appraisal of the new opportunities in the area of sensors provided by nanotechnologies and nanotechnology-enabled advancements. After introducing nanosensor classification and fundamental terms, the book outlines the properties of important nanomaterials and nanotechnologies used in nanosensor fabrication. Subsequent chapters are organized according to nanosensor type: physical (mechanical and acoustical, thermal and radiation, optical, and magnetic); chemical (atomic and molecular energies); and biological. The final chapter summarizes the current state of the field and discusses future trends. A complete and authoritative guide to nanosensors, this book offers up-to-date information on the fabrication, properties, and operating mechanisms of these fast and reliable sensors. It addresses progress in the field, fundamental issues and challenges facing researchers, and prospects for future development.
| Author | : Mildred Dresselhaus |
| Publisher | : Springer |
| Total Pages | : 521 |
| Release | : 2018-01-17 |
| Genre | : Science |
| ISBN | : 3662559226 |
This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.
| Author | : Wladyslaw Grabinski |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 210 |
| Release | : 2010-07-20 |
| Genre | : Technology & Engineering |
| ISBN | : 9048130468 |
Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
