Physics and Design of Nonclassical Nanoscale CMOS Devices with Ultra-thin Bodies
Author | : Vishal P. Trivedi |
Publisher | : |
Total Pages | : |
Release | : 2005 |
Genre | : Metal oxide semiconductor field-effect transistors |
ISBN | : |
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Thus, the impact of undoped body on the electrostatics of the generic DG MOSFET is examined. Carrier distribution in the body and in the quantized energy states is found to have profound effects in both weak and strong inversion. Quantum-mechanical (QM) effects, dependent on t sub Si, transverse electric field (epsilon sub x), and crystal orientation, are also physically modeled. With an undoped UTB, the need for gate-source/drain (G-S/D) underlap is emphasized as the gate length (L sub gate) approaches 7nm. L sub eff is related to L sub gate for designs with G-S/D underlap. Using numerical device simulations, physical insights on the bias dependence and the S/D lateral doping profile dependence of L sub eff are gained, relating the noted scalability in terms of L sub eff to L sub gate. The extrinsic S/D series resistance (R sub S/D) and the parasitic G-S/D capacitance (C sub GS/D) are also examined.