Photoelectron Emission in the Extreme Ultraviolet Region

Photoelectron Emission in the Extreme Ultraviolet Region
Author: L. Heroux
Publisher:
Total Pages: 90
Release: 1966
Genre: Aluminum
ISBN:

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Photoelectron emission from solid tungsten, nickel, and semitransparent aluminum cathodes exposed to ultraviolet radiation between 256 A and 1216 A has been studied with planar retarding-potential analyzers. The resulting current-voltage diagrams (CVDs) for these three metal cathodes are essentially identical. The CVDs comparing photoelectron emission from the front and rear surfaces of the semitransparent aluminum cathode are also identical. A retarding-potential analyzer having near-spherical geometry was also used to obtain CVDs for the photoelectrons emitted from the rear surface of a thin-aluminum cathode. The value of retarding potential detectors for limited spectral resolution in the extreme ultraviolet is discussed. A comparison of the CVDs for the thin aluminum cathode indicates that the spectral discrimination achieved with a spherical retarding-potential analyzer is superior to that obtained with a planar one. Both the planar and spherical detectors consisted of a retarding-potential analyzer coupled to an electron multiplier. The CVDs obtained by using the multiplier either as a photoelectron counter or in dc operation were found to be identical. The photoelectric yields of several metal and alkali halide cathodes commonly used in the extreme ultraviolet were also compared. Those of CsI and LiF were found to depend upon cathode thickness and to be sensitive to the time of aging in air. Preliminary data on the absolute yield of tungsten between 31.6 A and 304 A are presented. (Author).

Photoelectron Emission in the Extreme Ultraviolet Region

Photoelectron Emission in the Extreme Ultraviolet Region
Author: L. Heroux
Publisher:
Total Pages: 0
Release: 1966
Genre: Aluminum
ISBN:

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Photoelectron emission from solid tungsten, nickel, and semitransparent aluminum cathodes exposed to ultraviolet radiation between 256 A and 1216 A has been studied with planar retarding-potential analyzers. The resulting current-voltage diagrams (CVDs) for these three metal cathodes are essentially identical. The CVDs comparing photoelectron emission from the front and rear surfaces of the semitransparent aluminum cathode are also identical. A retarding-potential analyzer having near-spherical geometry was also used to obtain CVDs for the photoelectrons emitted from the rear surface of a thin-aluminum cathode. The value of retarding potential detectors for limited spectral resolution in the extreme ultraviolet is discussed. A comparison of the CVDs for the thin aluminum cathode indicates that the spectral discrimination achieved with a spherical retarding-potential analyzer is superior to that obtained with a planar one. Both the planar and spherical detectors consisted of a retarding-potential analyzer coupled to an electron multiplier. The CVDs obtained by using the multiplier either as a photoelectron counter or in dc operation were found to be identical. The photoelectric yields of several metal and alkali halide cathodes commonly used in the extreme ultraviolet were also compared. Those of CsI and LiF were found to depend upon cathode thickness and to be sensitive to the time of aging in air. Preliminary data on the absolute yield of tungsten between 31.6 A and 304 A are presented. (Author)

Soft X-Rays and Extreme Ultraviolet Radiation

Soft X-Rays and Extreme Ultraviolet Radiation
Author: David Attwood
Publisher: Cambridge University Press
Total Pages: 611
Release: 2007-02-22
Genre: Technology & Engineering
ISBN: 1139643428

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This detailed, comprehensive book describes the fundamental properties of soft X-rays and extreme ultraviolet (EUV) radiation and discusses their applications in a wide variety of fields, including EUV lithography for semiconductor chip manufacture and soft X-ray biomicroscopy. The author begins by presenting the relevant basic principles such as radiation and scattering, wave propagation, diffraction, and coherence. He then goes on to examine a broad range of phenomena and applications. The topics covered include spectromicroscopy, EUV astronomy, synchrotron radiation, and soft X-ray lasers. The author also provides a wealth of useful reference material such as electron binding energies, characteristic emission lines and photo-absorption cross-sections. The book will be of great interest to graduate students and researchers in engineering, physics, chemistry, and the life sciences. It will also appeal to practising engineers involved in semiconductor fabrication and materials science.

Technical Abstract Bulletin

Technical Abstract Bulletin
Author: Defense Documentation Center (U.S.)
Publisher:
Total Pages: 784
Release: 1967
Genre: Science
ISBN:

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