Numerical Models For The Simulation Of Nonstationary Effects In Submicron Semiconductor Devices
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| Author | : Edwin Chihchuan Kan |
| Publisher | : |
| Total Pages | : 210 |
| Release | : 1992 |
| Genre | : |
| ISBN | : |
Download Numerical Models for the Simulation of Nonstationary Effects in Submicron Semiconductor Devices Book in PDF, Epub and Kindle
Numerical modeling of nonstationary transport effects using partial differential equations derived from the Boltzmann Transport Equation (BTE) is investigated. Augmented drift-diffusion (ADD) models and improved energy transport (ET) models for submicron device simulation are constructed and numerically implemented. Analytical derivation of the length coefficient for the ADD models is presented for both single- and multi-valley approximations. Results of typical $nsp+ - n - nsp+$ ballistic diodes for Si and GaAs are presented. The extension of the ADD model to two dimensions is then formulated, and the implementation problems with the standard box integration method, as used in conventional drift-diffusion (DD) models, are examined. Improved ET models are derived from the zeroth and second moments of the Boltzmann transport equation and from the presumed function form of the even part of the distribution function. Energy band nonparabolicity and non-Maxwellian distribution effects are included to first order. The ET models are amenable to an efficient self-consistent discretization, with standard techniques, taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFETs are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamics simulations of ballistic diodes, are virtually eliminated. By comparing the formulation of the ET and HD models, we find that the spurious spike is caused by the momentum relaxation time approximation and the resulting form of the thermal diffusion terms. Calculations based on a two-carrier-population model, at the anode junction, further confirm our analysis of the spurious spike.
| Author | : Abel Garcia-Barrientos |
| Publisher | : |
| Total Pages | : 198 |
| Release | : 2013-10-21 |
| Genre | : |
| ISBN | : 9781493557257 |
Download Numerical Simulation of Semiconductor Structures Book in PDF, Epub and Kindle
The investigation of new materials, devices and techniques to improve the performance of telecommunications, spectroscopy and radar systems applications, has caused that the study of non-stationary effects of space charge in semiconductor structures be a strategy research area in the field of high speed semiconductor devices. Therefore, this book focuses in the study of the non-stationary effects of the space charge in semiconductor structures, where the nonlinear wave interaction in active media may serve to improve the high-frequency performance of semiconductor devices.
| Author | : Mykhaylo Andriychuk |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 662 |
| Release | : 2012-09-19 |
| Genre | : Computers |
| ISBN | : 9535107496 |
Download Numerical Simulation Book in PDF, Epub and Kindle
Numerical Simulation - from Theory to Industry is the edited book containing 25 chapters and divided into four parts. Part 1 is devoted to the background and novel advances of numerical simulation; second part contains simulation applications in the macro- and micro-electrodynamics. Part 3 includes contributions related to fluid dynamics in the natural environment and scientific applications; the last, fourth part is dedicated to simulation in the industrial areas, such as power engineering, metallurgy and building. Recent numerical techniques, as well as software the most accurate and advanced in treating the physical phenomena, are applied in order to explain the investigated processes in terms of numbers. Since the numerical simulation plays a key role in both theoretical and industrial research, this book related to simulation of many physical processes, will be useful for the pure research scientists, applied mathematicians, industrial engineers, and post-graduate students.
| Author | : Harold L. Grubin |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 762 |
| Release | : 1988 |
| Genre | : Science |
| ISBN | : 9780306429866 |
Download The Physics of Submicron Semiconductor Devices (Nato Asi Series. Series B. Physics, Vol 180) Book in PDF, Epub and Kindle
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
| Author | : Xunlei Jiang |
| Publisher | : |
| Total Pages | : 140 |
| Release | : 1995 |
| Genre | : Semiconductors |
| ISBN | : |
Download Numerical Simulations of Semiconductor Devices by Streamline- Diffusion Methods Book in PDF, Epub and Kindle
Abstract: "Theoretical and practical aspects of the design and implementation of the streamline-diffusion (SD) method for semiconductor device models are explored systematically. Emphasis is placed on the hydrodynamic (HD) model, which is computationally more challenging than the drift-diffusion (DD) model, but provides some important physical information missing in the DD model. We devise a non-symmetric SD method for device simulations. This numerical method is uniformly used for the HD model (including a proposed simplification (SHD)) and the DD model. An appropriate SD operator is derived for the general non-symmetric convection-diffusion system. Linear stability analysis shows that our proposed numerical method is stable if the system can be symmetrized. Stability arguments and numerical experiments also suggest that the combination of the method of lines and the semidiscrete SD method may not be appropriate for the transient problem, a fact which often has been ignored in the literature. An efficient method, consistent with the SD method used for conservation laws, is developed for the potential equation. The method produces a more accurate electric field than the conventional Galerkin method. Moreover, it solves for the potential and electric field in a decoupled manner. We apply our numerical method to the diode and MESFET devices. Shocks for the diode in one and two space dimensions and the electron depletion near the gate for the MESFET in two space dimensions are simulated. Model comparisons are implemented. We observe that the difference in solutions between the HD and DD models is significant. The solution discrepancy between the full HD and SHD models is almost negligible in MESFET simulation, as in many other engineering applications. However, an exceptional case is found in our experiments."
| Author | : Siegfried Selberherr |
| Publisher | : Springer |
| Total Pages | : 532 |
| Release | : 1993 |
| Genre | : Science |
| ISBN | : 9780387825045 |
Download Simulation of Semiconductor Devices and Processes Book in PDF, Epub and Kindle
| Author | : Karl Hess |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 273 |
| Release | : 2013-03-14 |
| Genre | : Technology & Engineering |
| ISBN | : 1475721242 |
Download Computational Electronics Book in PDF, Epub and Kindle
Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.
| Author | : Karl Hess |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 317 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461540267 |
Download Monte Carlo Device Simulation Book in PDF, Epub and Kindle
Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
| Author | : J.P. Nougier |
| Publisher | : Elsevier |
| Total Pages | : 523 |
| Release | : 2014-05-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1483295230 |
Download III-V Microelectronics Book in PDF, Epub and Kindle
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 388 |
| Release | : 1996 |
| Genre | : Technology & Engineering |
| ISBN | : 9789810223250 |
Download Compound Semiconductor Electronics Book in PDF, Epub and Kindle
In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
