Non Equilibrium Electronic Transport in Multilayered Nanostructures

Non Equilibrium Electronic Transport in Multilayered Nanostructures
Author: Jesus Cruz-Rojas
Publisher:
Total Pages: 270
Release: 2014
Genre: Materials science
ISBN:

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Recent advances in strongly correlated materials have produced systems with novel and interesting properties like high Tc superconductors, Mott insulators and others. These novel properties have sparked an interest in industry as well as in academia as new devices are being developed. One such kind of device that can be fabricated is a heterostructure, in which layers of different compounds are stacked in a single direction. Modern deposition techniques like electron beam epitaxy, in which atomic layers of different materials are deposited one at a time creating the device, are capable of fabricating heterostructures with atomic precision. We propose a technique to study heterostructures composed of strongly correlated materials out of equilibrium. By using the Keldysh Green's function formalism in the dynamical mean field theory (DMFT) framework the properties of a multilayered device are analyzed. The system is composed of infinite dimensional 2D lattices, stacked in the z direction. The first and last planes are then connected to a bulk reservoir, and several metallic planes are used to connect the bulk reservoir to the barrier region. The barrier region is the system of interest, also known as the device. The device is composed of a number of planes where the system correlations have been turned on. The correlations are then model by using the Falicov-Kimball Hamiltonian. The device is then connected to the bulk once again from the opposite side using metallic planes creating a symmetric system. In order to study the non equilibrium properties of the device a linear vector potential A(t) = A0 + tE is turned on a long time in the past for a unit of time and then turned off. This in turn will create a current in the bulk, in effect current biasing the device, as opposed to a voltage bias in which opposite sides of the device are held to a different potential. In this document we will explain the importance of the subject, we will derive and develop the algorithm and we will discuss results and challenges obtained from performing the numerical calculations.

Transport In Multilayered Nanostructures: The Dynamical Mean-field Theory Approach

Transport In Multilayered Nanostructures: The Dynamical Mean-field Theory Approach
Author: James K Freericks
Publisher: World Scientific
Total Pages: 343
Release: 2006-09-15
Genre: Science
ISBN: 1908979453

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This novel book is the first comprehensive text on dynamical mean-field theory (DMFT), which has emerged over the past two decades as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, the volume develops the formalism of many-body Green's functions using the equation of motion approach, which requires an undergraduate solid state physics course and a graduate quantum mechanics course as prerequisites. The DMFT is applied to study transport in multilayered nanostructures, which is likely to be one of the most prominent applications of nanotechnology in the coming years. The text is modern in scope focusing on exact numerical methods rather than the perturbation theory. Formalism is developed first for the bulk and then for the inhomogeneous multilayered systems. The science behind the metal-insulator transition, electronic charge reconstruction, and superconductivity are thoroughly described. The book covers complete derivations and emphasizes how to carry out numerical calculations, including discussions of parallel programing algorithms. Detailed descriptions of the crossover from tunneling to thermally activated transport, of the properties of Josephson junctions with barriers tuned near the metal-insulator transition, and of thermoelectric coolers and power generators are provided as applications of the theory./a

Transport In Multilayered Nanostructures: The Dynamical Mean-field Theory Approach (Second Edition)

Transport In Multilayered Nanostructures: The Dynamical Mean-field Theory Approach (Second Edition)
Author: James K Freericks
Publisher: World Scientific
Total Pages: 451
Release: 2016-03-15
Genre: Science
ISBN: 178326859X

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Over the last 25 years, dynamical mean-field theory (DMFT) has emerged as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, this book presents the first comprehensive treatment of this ever-developing topic. Transport in Mutlilayered Nanostructures is varied and modern in its scope, and:A series of over 50 problems help develop the skills to allow readers to reach the level of being able to contribute to research. This book is suitable for an advanced graduate course in DMFT, and for individualized study by graduate students, postdoctoral fellows and advanced researchers wishing to enter the field.

Transport in Nanostructures

Transport in Nanostructures
Author: David K. Ferry
Publisher: Cambridge University Press
Total Pages: 671
Release: 2009-08-20
Genre: Science
ISBN: 0521877482

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The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.

Theory of Quantum Transport at Nanoscale

Theory of Quantum Transport at Nanoscale
Author: Dmitry Ryndyk
Publisher: Springer
Total Pages: 251
Release: 2015-12-08
Genre: Science
ISBN: 3319240889

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This book is an introduction to a rapidly developing field of modern theoretical physics – the theory of quantum transport at nanoscale. The theoretical methods considered in the book are in the basis of our understanding of charge, spin and heat transport in nanostructures and nanostructured materials and are widely used in nanoelectronics, molecular electronics, spin-dependent electronics (spintronics) and bio-electronics. The book is based on lectures for graduate and post-graduate students at the University of Regensburg and the Technische Universität Dresden (TU Dresden). The first part is devoted to the basic concepts of quantum transport: Landauer-Büttiker method and matrix Green function formalism for coherent transport, Tunneling (Transfer) Hamiltonian and master equation methods for tunneling, Coulomb blockade, vibrons and polarons. The results in this part are obtained as possible without sophisticated techniques, such as nonequilibrium Green functions, which are considered in detail in the second part. A general introduction into the nonequilibrium Green function theory is given. The approach based on the equation-of-motion technique, as well as more sophisticated one based on the Dyson-Keldysh diagrammatic technique are presented. The main attention is paid to the theoretical methods able to describe the nonequilibrium (at finite voltage) electron transport through interacting nanosystems, specifically the correlation effects due to electron-electron and electron-vibron interactions.

Transport in Multilayered Nanostructures

Transport in Multilayered Nanostructures
Author: James K. Freericks
Publisher:
Total Pages: 432
Release: 2016
Genre: TECHNOLOGY & ENGINEERING
ISBN: 9781783268580

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"Over the last 25 years, dynamical mean-field theory (DMFT) has emerged as one of the most powerful new developments in many-body physics. Written by one of the key researchers in the field, this book presents the first comprehensive treatment of this ever-developing topic. Transport in Mutlilayered Nanostructures is varied and modern in its scope, and: Develops the formalism of many-body Green's functions using the equation-of-motion approach Applies DMFT to study transport in multilayered nanostructures, which is likely to be one of the most prominent applications of nanotechnology in the coming years Develops formalism first for the bulk and then for the inhomogeneous multilayered systems Describes in great detail the science behind the metal-insulator transition, electronic charge reconstruction, strongly correlated contributions to capacitance, and superconductivity Includes complete derivations and emphasizes how to carry out numerical calculations, including discussions of parallel programming algorithms Provides descriptions of the crossover from tunneling to thermally activated transport, of the properties of Josephson junctions with barriers tuned near the metal-insulator transition of thermoelectric coolers and power generators and of nonequilibrium extensions to determine current-voltage characteristics as applications of the theory A series of over 40 problems help develop the skills to allow readers to reach the level of being able to contribute to research. This book is suitable for an advanced graduate course in DMFT, and for individualized study by graduate students, postdoctoral fellows and advanced researchers wishing to enter the field"--

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Advanced Physics of Electron Transport in Semiconductors and Nanostructures
Author: Massimo V. Fischetti
Publisher: Springer
Total Pages: 481
Release: 2016-05-20
Genre: Technology & Engineering
ISBN: 3319011014

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This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Introduction to the Physics of Nanoelectronics

Introduction to the Physics of Nanoelectronics
Author: Seng Ghee Tan
Publisher: Elsevier
Total Pages: 308
Release: 2012-03-28
Genre: Technology & Engineering
ISBN: 0857095889

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This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices. Theoretical methodology is developed using quantum mechanical and non-equilibrium Green’s function (NEGF) techniques to calculate electronic currents and elucidate their transport properties at the atomic scale. The spin Hall effect is explained and its application to the emerging field of spintronics – where an electron’s spin as well as its charge is utilised – is discussed. Topological dynamics and gauge potential are introduced with the relevant mathematics, and their application in nanoelectronic systems is explained. Graphene, one of the most promising carbon-based nanostructures for nanoelectronics, is also explored. Begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics Encompasses quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices Comprehensively introduces topological dynamics and gauge potential with the relevant mathematics, and extensively discusses their application in nanoelectronic systems

Electrical Transport in Nanoscale Systems

Electrical Transport in Nanoscale Systems
Author: Massimiliano Di Ventra
Publisher: Cambridge University Press
Total Pages: 477
Release: 2008-08-07
Genre: Science
ISBN: 1139475029

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In recent years there has been a huge increase in the research and development of nanoscale science and technology. Central to the understanding of the properties of nanoscale structures is the modeling of electronic conduction through these systems. This graduate textbook provides an in-depth description of the transport phenomena relevant to systems of nanoscale dimensions. In this textbook the different theoretical approaches are critically discussed, with emphasis on their basic assumptions and approximations. The book also covers information content in the measurement of currents, the role of initial conditions in establishing a steady state, and the modern use of density-functional theory. Topics are introduced by simple physical arguments, with particular attention to the non-equilibrium statistical nature of electrical conduction, and followed by a detailed formal derivation. This textbook is ideal for graduate students in physics, chemistry, and electrical engineering.