Morphology Of Aluminium Gallium Nitride And Indium Gallium Nitride Alloys
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Author | : Lijian Geng |
Publisher | : |
Total Pages | : 50 |
Release | : 2001 |
Genre | : Aluminum alloys |
ISBN | : |
Download Morphology of Aluminium Gallium Nitride and Indium Gallium Nitride Alloys Book in PDF, Epub and Kindle
Author | : Samuel Clagett Strite (III) |
Publisher | : |
Total Pages | : |
Release | : 1993 |
Genre | : |
ISBN | : |
Download Investigations of the Gallium Nitride, Aluminum Nitride and Indium Nitride Semiconductors: Structural, Optical, Electronic and Interfacial Properties Book in PDF, Epub and Kindle
Described in this thesis is an investigation of some fundamental physical properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although compromises between the plasma power and the crystal growth rate had to be sought. The zincblende polytypes of GaN and InN were studied with the intent of evaluating their potential as a wide bandgap semiconductor system for short wavelength optical devices. The metastability of these crystals has led us to the conclusion that the zincblende nitrides are not a promising candidate for these applications due to their tendency to nucleate wurtzite domains. Bulk samples of zincblende GaN and InN and wurtzite GaN, AlN and InN were studied by x-ray photoemission spectroscopy (XPS) in an effort to determine their valence band structure. We report the various energies of the valence band density of states maxima as well as the ionicity gaps of each material. Wurtzite GaN/AlN and InN/AlN heterostructures were also investigated by XPS in order to estimate the valence band discontinuities of these heterojunctions. We measured valence band discontinuities of $Delta$E$rmsbsp{v}{GaN/AlN}$ = 0.4 $pm$ 0.4 eV and $Delta$E$rmsbsp{v}{InN/AlN}$ = 1.1 $pm$ 0.4 eV. Our results indicate that both systems have heterojunction band lineups fundamentally suitable for common optical device applications.
Author | : Stephen J. Pearton |
Publisher | : Springer Science & Business Media |
Total Pages | : 402 |
Release | : 2006-02-24 |
Genre | : Technology & Engineering |
ISBN | : 9781852339357 |
Download Gallium Nitride Processing for Electronics, Sensors and Spintronics Book in PDF, Epub and Kindle
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author | : |
Publisher | : |
Total Pages | : 87 |
Release | : 1998 |
Genre | : Aluminum nitride |
ISBN | : |
Download Gallium nitride, indium nitride, aluminum nitride--struktury i pribory Book in PDF, Epub and Kindle
Author | : Kenneth Kanin Chu |
Publisher | : |
Total Pages | : 298 |
Release | : 2000 |
Genre | : |
ISBN | : |
Download Design and Fabrication of Aluminum Gallium Nitride Book in PDF, Epub and Kindle
Author | : Goutam Koley |
Publisher | : |
Total Pages | : 378 |
Release | : 2003 |
Genre | : Epitaxy |
ISBN | : |
Download Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy Book in PDF, Epub and Kindle
Author | : Choudhury Jayant Praharaj |
Publisher | : |
Total Pages | : 238 |
Release | : 2004 |
Genre | : |
ISBN | : |
Download A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts Book in PDF, Epub and Kindle
Author | : Hyungtak Kim |
Publisher | : |
Total Pages | : 276 |
Release | : 2003 |
Genre | : |
ISBN | : |
Download Fabrication, Performance and Degradation Mechanism of Aluminium [i.e. Aluminum] Gallium Nitride/gallium Nitride Heterostructure Field Effect Transistors Book in PDF, Epub and Kindle
Author | : James H. Edgar |
Publisher | : Institution of Electrical Engineers |
Total Pages | : 692 |
Release | : 1999 |
Genre | : Technology & Engineering |
ISBN | : |
Download Properties, Processing and Applications of Gallium Nitride and Related Semiconductors Book in PDF, Epub and Kindle
Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Author | : Cole W. Litton |
Publisher | : SPIE-International Society for Optical Engineering |
Total Pages | : 322 |
Release | : 2006 |
Genre | : Science |
ISBN | : 9780819461636 |
Download Gallium Nitride Materials and Devices Book in PDF, Epub and Kindle
Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.