Modeling And Characterization Of The Insulated Gate Bipolar Transistor In The Near Threshold Region
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Author | : Farah P. Vandrevala |
Publisher | : |
Total Pages | : |
Release | : 2013 |
Genre | : |
ISBN | : |
Download Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region Book in PDF, Epub and Kindle
The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.
Author | : Allen Ray Hefner |
Publisher | : |
Total Pages | : 336 |
Release | : 1987 |
Genre | : Bipolar transistors |
ISBN | : |
Download Characterization and Modeling of the Power Insulated Gate Bipolar Transistor Book in PDF, Epub and Kindle
Author | : Cheng Shen |
Publisher | : |
Total Pages | : 138 |
Release | : 1994 |
Genre | : |
ISBN | : |
Download Modeling, Design, Fabrication, and Characterization of the Insulated Gate Bipolar Transistor (IGBT) with Integrated Current Sensors Book in PDF, Epub and Kindle
Author | : Vinod Kumar Khanna |
Publisher | : John Wiley & Sons |
Total Pages | : 648 |
Release | : 2004-04-05 |
Genre | : Technology & Engineering |
ISBN | : 047166099X |
Download Insulated Gate Bipolar Transistor IGBT Theory and Design Book in PDF, Epub and Kindle
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Author | : Lin Wang |
Publisher | : |
Total Pages | : 45 |
Release | : 1999 |
Genre | : |
ISBN | : |
Download Design, Simulation, Fabrication and Characterization of the Insulated Gate Bipolar Transistor with Base Resistance Controlled Thyristor (IGBT/BRT). Book in PDF, Epub and Kindle
Author | : Allen Ray Hefner |
Publisher | : |
Total Pages | : |
Release | : 1987 |
Genre | : |
ISBN | : |
Download Characterization and Modeling of the Power Insulated Bipolar Transistor Book in PDF, Epub and Kindle
Author | : Stanford University. Stanford Electronics Laboratories |
Publisher | : |
Total Pages | : 112 |
Release | : 1971 |
Genre | : Field-effect transistors |
ISBN | : |
Download An Accurate Model for the Short Channel Insulated Gate Field-effect Transistor Book in PDF, Epub and Kindle
An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (
Author | : Ian E. Getreu |
Publisher | : Elsevier Science & Technology |
Total Pages | : 292 |
Release | : 1978 |
Genre | : Technology & Engineering |
ISBN | : |
Download Modeling the Bipolar Transistor Book in PDF, Epub and Kindle
Author | : Jiann-Shiun Yuan |
Publisher | : Legare Street Press |
Total Pages | : 0 |
Release | : 2022-10-27 |
Genre | : |
ISBN | : 9781019258682 |
Download Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation Book in PDF, Epub and Kindle
This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Author | : 許哲誌 |
Publisher | : |
Total Pages | : |
Release | : 2010 |
Genre | : |
ISBN | : |
Download Characteristics Simulation, Device Modeling and Reliability Test of Insulated Gate Bipolar Transistor Book in PDF, Epub and Kindle