Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region

Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region
Author: Farah P. Vandrevala
Publisher:
Total Pages:
Release: 2013
Genre:
ISBN:

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The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design
Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
Total Pages: 648
Release: 2004-04-05
Genre: Technology & Engineering
ISBN: 047166099X

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A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

An Accurate Model for the Short Channel Insulated Gate Field-effect Transistor

An Accurate Model for the Short Channel Insulated Gate Field-effect Transistor
Author: Stanford University. Stanford Electronics Laboratories
Publisher:
Total Pages: 112
Release: 1971
Genre: Field-effect transistors
ISBN:

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An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (

Modeling the Bipolar Transistor

Modeling the Bipolar Transistor
Author: Ian E. Getreu
Publisher: Elsevier Science & Technology
Total Pages: 292
Release: 1978
Genre: Technology & Engineering
ISBN:

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Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation

Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation
Author: Jiann-Shiun Yuan
Publisher: Legare Street Press
Total Pages: 0
Release: 2022-10-27
Genre:
ISBN: 9781019258682

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