Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation

Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation
Author: Jiann-Shiun Yuan
Publisher: Legare Street Press
Total Pages: 0
Release: 2022-10-27
Genre:
ISBN: 9781019258682

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This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Heterojunction Bipolar Transistors for Circuit Design

Heterojunction Bipolar Transistors for Circuit Design
Author: Jianjun Gao
Publisher: John Wiley & Sons
Total Pages: 280
Release: 2015-04-27
Genre: Technology & Engineering
ISBN: 1118921542

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A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Bipolar transistor and MOSFET device models

Bipolar transistor and MOSFET device models
Author: Kunihiro Suzuki
Publisher: Bentham Science Publishers
Total Pages: 587
Release: 2016-03-02
Genre: Science
ISBN: 1681082616

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Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.

Semiconductor Device Physics and Simulation

Semiconductor Device Physics and Simulation
Author: J.S. Yuan
Publisher: Springer Science & Business Media
Total Pages: 341
Release: 2013-11-22
Genre: Technology & Engineering
ISBN: 148991904X

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The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Large-signal Modeling of Bipolar Transistors for Computer-aided Circuit Analysis

Large-signal Modeling of Bipolar Transistors for Computer-aided Circuit Analysis
Author: Stanford University. Stanford Electronics Laboratories
Publisher:
Total Pages: 134
Release: 1971
Genre: Junction transistors
ISBN:

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Improved large-signal models for the bipolar transistor are derived which are suitable for dc and transient computer-aided circuit analysis. The models are developed from the results of a two-dimensional analysis which yields the normal-active dc characteristics of the intrinsic portion of the transistor. Each of the models is formulated in terms of a measurable set of parameters which can theoretically be related to the low-level electrical parameters of the transistor and hence to its basic geometrical and physical characteristics. Based upon the dc model, two transient models are derived which correspond to one- and two-section approximations to the distributed nature of the intrinsic base as seen from the emitter-base terminals. The primary attribute of the single-section model, which corresponds in its complexity to commonly employed models, is its simplicity.

Assessment and Modeling of Non-quasi-static, Non-local, and Multi-dimensional Effects in Advanced Bipolar Junction Transistors

Assessment and Modeling of Non-quasi-static, Non-local, and Multi-dimensional Effects in Advanced Bipolar Junction Transistors
Author: Joohyun Jin
Publisher:
Total Pages: 322
Release: 1992
Genre:
ISBN:

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This dissertation is concerned with assessment, modeling, and simulation of non-quasi-static (NQS), nonlocal, and multi-dimensional effects in advanced bipolar junction transistors. A simple analytic model for the sidewall injection of the base current, which is shown to be the most important multi-dimensional component in scaled devices, is developed based on the separation of the base current into internal and peripheral components. Simulation results for typical test BJTs with various emitter geometries are compared against corresponding measurements to support the model. A novel NQS model for transient current crowding in advanced BJTs is developed for circuit simulation. The new model, implemented based on a novel use of the previous time-step solution in the current time-step analysis, characterizes a time-dependent effective bias on the emitterbase junction in a semi-numerical analysis, accounting for base conductivity modulation and the NQS nature of the crowding. The (dc) debiasing effect, which is important in analog circuits, is inherently accounted for as well. An analytic model for electron velocity overshoot resulting from non-local transport in advanced silicon-based BJTs is developed. The model, which characterizes an effective saturated drift velocity, larger than the classical value because of overshoot, is intended for circuit simulation. The model uses an augmented drift-velocity formalism that involves a length coefficient derived via Monte Carlo analysis. The associated velocity relaxation is characterized phenomenologically to be consistent with overshoot analysis. The developed charge-based models are implemented in MMSPICE-2, a semi-numerical mixed-mode device/circuit simulator, such that users may activate any combination of the new features by option. The resulting hierarchical tool, along with the parasitic charge (capacitance) models included to enhance the usefulness of the simulator, could indeed enable predictive yet computationally efficient mixed-mode simulations for bipolar (and BiCMOS) VLSI technology/manufacturing CAD. Utility of MMSPICE-2 is demonstrated by transient simulations of ECL circuits and devices.

Compact Hierarchical Bipolar Transistor Modeling with Hicum

Compact Hierarchical Bipolar Transistor Modeling with Hicum
Author: Michael Schr”ter
Publisher: World Scientific
Total Pages: 753
Release: 2010
Genre: Technology & Engineering
ISBN: 981427321X

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Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.

Silicon Germanium

Silicon Germanium
Author: Raminderpal Singh
Publisher: John Wiley & Sons
Total Pages: 368
Release: 2004-03-15
Genre: Technology & Engineering
ISBN: 0471660914

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"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM