Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2011: Volume 1335

Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2011: Volume 1335
Author: Mikhail R. Baklanov
Publisher: Materials Research Society
Total Pages: 0
Release: 2011-11-21
Genre: Technology & Engineering
ISBN: 9781605113128

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This volume includes selected papers based on the presentations given at Symposium O, "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics," held at the April 25−29, 2011 MRS Spring Meeting in San Francisco, California. The symposium included topics relating to low-k dielectrics, integration, reliability, metallization, packaging and emerging technologies.

Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009:

Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009:
Author: Martin Gall
Publisher: Cambridge University Press
Total Pages: 204
Release: 2014-06-05
Genre: Technology & Engineering
ISBN: 9781107408319

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Enabled by the development and introduction of new materials, the semiconductor industry continues to follow Moore's law into 32nm and 22nm technologies. Advanced interconnect structures require the use of porous dielectrics with further reduced k-values and even weaker mechanical properties, as well as much thinner metallization liners. In addition, the increasing resistivity of Cu at decreasing dimensions must be addressed in order to maintain the performance of continuously shrinking devices. To deal with these issues, and to maintain the reliability of the interconnects, innovations in materials, processes and architectures are needed. This book brings together researchers from around the world to exchange the latest advances in materials, processes, integration and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies. Papers from a joint session with Symposium F, Packaging, Chip-Package Interactions and Solder Materials Challenges, are also included and focus on 3D chip stacking and molecular electronics.

Semiconductor Defect Engineering: Volume 994

Semiconductor Defect Engineering: Volume 994
Author: S. Ashok
Publisher:
Total Pages: 400
Release: 2007-09-10
Genre: Technology & Engineering
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies.

Semiconductor Defect Engineering: Volume 994

Semiconductor Defect Engineering: Volume 994
Author: S. Ashok
Publisher: Cambridge University Press
Total Pages: 392
Release: 2007-09-10
Genre: Technology & Engineering
ISBN: 9781558999541

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This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating lifetime. The concept of defect engineering has found numerous applications in the fabrication of semiconductors and devices with improved and/or new properties, and new trends extend defect engineering in structures with nm dimensions. This book shows interaction among researchers pursing effective use of defect incorporation and control at various facets of technology and widely different semiconductor materials systems. Topics include: dopant and defect issues in oxide and nitride semiconductors; defect properties, activation and passivation; defects in nanostructures and organic semiconductors; ion implantation and beam processing; defect characterization; heterojunctions and interfaces; process-induced defects; dopants and defects in group-IV semiconductors and defects in devices.

Ion-Beam-Based Nanofabrication: Volume 1020

Ion-Beam-Based Nanofabrication: Volume 1020
Author: Daryush Ila
Publisher:
Total Pages: 264
Release: 2007-09-05
Genre: Science
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Interconnect Reliability in Advanced Memory Device Packaging

Interconnect Reliability in Advanced Memory Device Packaging
Author: Chong Leong, Gan
Publisher: Springer Nature
Total Pages: 223
Release: 2023-05-30
Genre: Computers
ISBN: 3031267087

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This book explains mechanical and thermal reliability for modern memory packaging, considering materials, processes, and manufacturing. In the past 40 years, memory packaging processes have evolved enormously. This book discusses the reliability and technical challenges of first-level interconnect materials, packaging processes, advanced specialty reliability testing, and characterization of interconnects. It also examines the reliability of wire bonding, lead-free solder joints such as reliability testing and data analyses, design for reliability in hybrid packaging and HBM packaging, and failure analyses. The specialty of this book is that the materials covered are not only for second-level interconnects, but also for packaging assembly on first-level interconnects and for the semiconductor back-end on 2.5D and 3D memory interconnects. This book can be used as a text for college and graduate students who have the potential to become our future leaders, scientists, and engineers in the electronics and semiconductor industry.

Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits: Volume 514

Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits: Volume 514
Author: S. P. Murarka
Publisher:
Total Pages: 596
Release: 1998-11-02
Genre: Technology & Engineering
ISBN:

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Comprising the proceedings of an MRS symposium held in April of 1998, contributions in this volume are divided into ten sections: interconnection frontiers; aluminum interconnects; cobalt and other silicides; titanium silicide; MOSFET, source, drain, and interconnect engineering; copper interconnects and barriers; a poster session on advanced interconnects and contacts; contacts to compound semiconductor devices; novel interconnect materials and schemes; and diffusion barriers. Annotation copyrighted by Book News, Inc., Portland, OR