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| Author | : Sunil Raghavan |
| Publisher | : |
| Total Pages | : 180 |
| Release | : 2003 |
| Genre | : Infrared detectors |
| ISBN | : |
| Author | : Sheng S. Li |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 221 |
| Release | : 2013-11-27 |
| Genre | : Science |
| ISBN | : 1461557593 |
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
| Author | : Victor Ryzhii |
| Publisher | : World Scientific |
| Total Pages | : 359 |
| Release | : 2003-06-25 |
| Genre | : Technology & Engineering |
| ISBN | : 9814486442 |
Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
| Author | : Sheng S. Li |
| Publisher | : Springer |
| Total Pages | : 232 |
| Release | : 1998-07-31 |
| Genre | : Science |
| ISBN | : |
The purpose of Intersubband Transitions in Quantum Wells: Physics and Devices is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. This reference work is based on the International Workshop that was held at National Cheng Kung University in Tainan, Taiwan in December 15-18, 1997. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 mum). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covering most aspects of the intersubband transition phenomena including: the basic intersubband transition process, multiquantum well infrared photodetector (QWIP) physics, large format (640×480) GaAs QWIP (with 9.0 mum cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long-wavelength quantum cascade (QC) lasers such as short (lambda = 3.4 mum) and long (lambda = 11.5 mum) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15.5 mum wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. Intersubband Transitions in Quantum Wells: Physics and Devices will be of interest to researchers from universities and industrial laboratories working on physics and devices of nanostructures, and researchers in the infrared (IR) community.
| Author | : V. Ryzhii |
| Publisher | : World Scientific |
| Total Pages | : 362 |
| Release | : 2003 |
| Genre | : Technology & Engineering |
| ISBN | : 9789812383082 |
Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
| Author | : V. Ryzhii |
| Publisher | : |
| Total Pages | : 5 |
| Release | : 2000 |
| Genre | : |
| ISBN | : |
We review the recent studies of physical effects in quantum well and quantum dot infrared photodetectors utilizing intersubband transitions.
| Author | : Roberto Paiella |
| Publisher | : McGraw Hill Professional |
| Total Pages | : 454 |
| Release | : 2010-05-05 |
| Genre | : Technology & Engineering |
| ISBN | : 0071492070 |
Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.
| Author | : Saumya Sengupta |
| Publisher | : Springer |
| Total Pages | : 77 |
| Release | : 2017-08-04 |
| Genre | : Technology & Engineering |
| ISBN | : 9811057028 |
This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.
| Author | : Emmanuel Rosencher |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 341 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 1461533465 |
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
| Author | : |
| Publisher | : |
| Total Pages | : 79 |
| Release | : 2000 |
| Genre | : |
| ISBN | : |
In this research program, we have investigated a four-stack, four-color quantum well infrared photodetector (QWIP), and studied the voltage distribution and temperature effect in this four-color QWIP. We have conducted a study on the quantum confined Stark-effect in an n-type QWIP. We have performed theoretical studies of the intersubband optical transitions in quantum dots and the design of GaAs/InGaAs and InAs/InAlAs quantum dot infrared photodetectors (QDIPs) for MWIR and LWIR detection. A new QWIP for very long wavelength infrared (VLWIR) applications has been investigated for 14-16 (micrometer) detection. Specific issues concerning device physics, detector design and device performance of the VLWIR QWIP are addressed. A VLWIR QWIP has been designed, fabricated and characterized. Two high performance multi-color, broadband QWIPs using digital graded superlattice barriers (DGSLB) for long wavelength infrared (LWIR) and broadband (BB) infrared detection have been demonstrated. We have also developed a high performance broadband (BB) In(0.26) Ga(0.74) As/Al(x) Ga(1-x)As QWIP using a linearly graded (LGB) Al(x) Ga(1-x) As barrier for LWIR detection. Theoretical study on the enhancement of quantum efficiency in a QWIP by using photonic crystal structure has also been carried out in this report.
