Hydrogen in Crystalline Semiconductors

Hydrogen in Crystalline Semiconductors
Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
Total Pages: 374
Release: 2013-03-08
Genre: Science
ISBN: 3642847781

Download Hydrogen in Crystalline Semiconductors Book in PDF, Epub and Kindle

vgl. Hardcoverausgabe.

Hydrogen in Semiconductors

Hydrogen in Semiconductors
Author: M. Stutzmann
Publisher: Elsevier
Total Pages: 598
Release: 2012-12-02
Genre: Science
ISBN: 0444598839

Download Hydrogen in Semiconductors Book in PDF, Epub and Kindle

Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.

Hydrogen-related Effects in Crystalline Semiconductors

Hydrogen-related Effects in Crystalline Semiconductors
Author:
Publisher:
Total Pages:
Release: 1988
Genre:
ISBN:

Download Hydrogen-related Effects in Crystalline Semiconductors Book in PDF, Epub and Kindle

Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H2. Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs.

Hydrogen in Semiconductors

Hydrogen in Semiconductors
Author: Jacques I. Pankove
Publisher: Academic Press
Total Pages: 655
Release: 1991-04-23
Genre: Technology & Engineering
ISBN: 0080864317

Download Hydrogen in Semiconductors Book in PDF, Epub and Kindle

Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Hydrogen in semiconductors : bulk and surface properties ; proceedings of the sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990

Hydrogen in semiconductors : bulk and surface properties ; proceedings of the sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990
Author: Martin Stutzmann
Publisher:
Total Pages: 581
Release: 1991
Genre: Hydrogen
ISBN:

Download Hydrogen in semiconductors : bulk and surface properties ; proceedings of the sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 Book in PDF, Epub and Kindle

Hydrogen in Semiconductors II

Hydrogen in Semiconductors II
Author:
Publisher: Academic Press
Total Pages: 541
Release: 1999-05-05
Genre: Science
ISBN: 0080525253

Download Hydrogen in Semiconductors II Book in PDF, Epub and Kindle

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference

Deep Centers in Semiconductors

Deep Centers in Semiconductors
Author: Sokrates T. Pantelides
Publisher: CRC Press
Total Pages: 952
Release: 1992-11-30
Genre: Science
ISBN: 9782881245626

Download Deep Centers in Semiconductors Book in PDF, Epub and Kindle

Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR

Topics in Growth and Device Processing of III-V Semiconductors

Topics in Growth and Device Processing of III-V Semiconductors
Author: S. J. Pearton
Publisher: World Scientific
Total Pages: 568
Release: 1996
Genre: Technology & Engineering
ISBN: 9789810218843

Download Topics in Growth and Device Processing of III-V Semiconductors Book in PDF, Epub and Kindle

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.