High Purity Silicon
Author | : |
Publisher | : |
Total Pages | : 724 |
Release | : 2000 |
Genre | : Crystal growth |
ISBN | : |
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Author | : |
Publisher | : |
Total Pages | : 724 |
Release | : 2000 |
Genre | : Crystal growth |
ISBN | : |
Author | : Cor L. Claeys |
Publisher | : The Electrochemical Society |
Total Pages | : 370 |
Release | : 2008-10 |
Genre | : Crystal growth |
ISBN | : 156677652X |
The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performances. Device and circuit aspects related to the application of devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and device aspects.
Author | : Electrochemical Society. Meeting |
Publisher | : The Electrochemical Society |
Total Pages | : 720 |
Release | : 2000 |
Genre | : Science |
ISBN | : 9781566772846 |
"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Author | : Cor L. Claeys |
Publisher | : The Electrochemical Society |
Total Pages | : 454 |
Release | : 2004 |
Genre | : Technology & Engineering |
ISBN | : 9781566774185 |
"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.
Author | : Cor L. Claeys |
Publisher | : The Electrochemical Society |
Total Pages | : 504 |
Release | : 2006 |
Genre | : Crystal growth |
ISBN | : 1566775043 |
This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.
Author | : Clark R. Neuharth |
Publisher | : |
Total Pages | : 24 |
Release | : 1989 |
Genre | : Infrared detectors |
ISBN | : |
Author | : Robert H. Schwaar |
Publisher | : |
Total Pages | : |
Release | : 1988 |
Genre | : Silicon |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : |
Release | : 1984 |
Genre | : |
ISBN | : |
A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.
Author | : Cor L. Claeys |
Publisher | : The Electrochemical Society |
Total Pages | : 498 |
Release | : 1998 |
Genre | : Science |
ISBN | : 9781566772075 |
Author | : Cor L. Claeys |
Publisher | : The Electrochemical Society |
Total Pages | : 428 |
Release | : 2002 |
Genre | : Science |
ISBN | : 9781566773447 |