Growth and Characterization of III-nitride Materials for High Efficiency Optoelectronic Devices by Metalorganic Chemical Vapor Deposition

Growth and Characterization of III-nitride Materials for High Efficiency Optoelectronic Devices by Metalorganic Chemical Vapor Deposition
Author: Suk Choi
Publisher:
Total Pages:
Release: 2012
Genre: Light emitting diodes
ISBN:
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Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested.

III-nitride

III-nitride
Author: Zhe Chuan Feng
Publisher: Imperial College Press
Total Pages: 442
Release: 2006
Genre: Technology & Engineering
ISBN: 1860949037
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III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.

Optoelectronic Devices

Optoelectronic Devices
Author: M Razeghi
Publisher: Elsevier
Total Pages: 602
Release: 2004
Genre: Science
ISBN: 9780080444260
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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Growth and Characterization of Nitride Semiconductors on Chemical Vapor Deposited Diamond

Growth and Characterization of Nitride Semiconductors on Chemical Vapor Deposited Diamond
Author: Raju Ahmed
Publisher:
Total Pages: 434
Release: 2018
Genre: Semiconductors
ISBN:
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Group III nitride semiconductor-based devices have emerged as the best candidates for handling higher power and frequency in recent years. Performance of various devices such AlGaN/ GaN high electron mobility transistors, GaN lasers and GaN LEDs are often hindered by self-heating of these materials and poor heat removal capabilities of the substrate materials. Chemical vapor deposited (CVD) diamond has demonstrated the best heat removal capability, when employed as the substrate material for GaN based high power devices, due to its high thermal conductivity. Diamond is either grown directly on the backside or bonded with GaN using an adhesion layer to extract excessive heat from the near junction region of these devices. In both cases, thermal resistance associated with the interface of diamond and GaN limits the effectiveness of the diamond layer. In this work, single crystal GaN has been grown using metal organic chemical vapor deposition (MOCVD) directly on chemical vapor deposited diamond without any adhesion layer in a novel way which will mitigate thermal resistance between the near junction region of GaN devices and diamond substrate. The growth of GaN-on-diamond was achieved through a series of experiments and characterizations in various steps of the process.

Optoelectronic Devices: III Nitrides

Optoelectronic Devices: III Nitrides
Author: Mohamed Henini
Publisher: Elsevier
Total Pages: 578
Release: 2004-12-17
Genre: Science
ISBN: 0080538118
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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

III-nitride Devices and Nanoengineering

III-nitride Devices and Nanoengineering
Author: Zhe Chuan Feng
Publisher: World Scientific
Total Pages: 477
Release: 2008
Genre: Technology & Engineering
ISBN: 1848162235
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Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride

Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride
Author: Roland Yingjie Tay
Publisher: Springer
Total Pages: 152
Release: 2018-06-20
Genre: Technology & Engineering
ISBN: 9811088098
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This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.

Proceedings of 19th World Congress on Materials Science and Engineering 2018

Proceedings of 19th World Congress on Materials Science and Engineering 2018
Author: ConferenceSeries
Publisher: ConferenceSeries
Total Pages: 212
Release:
Genre:
ISBN:
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June 11-13, 2018 Barcelona, Spain Key Topics : Materials Science and Engineering, Nanomaterials and Nanotechnology, Biomaterials and Medical Devices, Polymer Science and Technology, Ceramics and Composite Materials, Electronic, Optical and Magnetic Materials, Emerging Smart Materials, Materials for Energy and Environmental Sustainability, Physics and Chemistry of Materials, Metals, Mining, Metallurgy and Materials, Mechanics, Characterization Techniques and Equipments, Graphene and 2D Materials,

III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423

III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423
Author: D. Kurt Gaskill
Publisher:
Total Pages: 824
Release: 1996-11-15
Genre: Science
ISBN:
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This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.