Fundamentals of Novel Oxide/semiconductor Interfaces
| Author | : C. R. Abernathy |
| Publisher | : |
| Total Pages | : 432 |
| Release | : 2004 |
| Genre | : Dielectric devices |
| ISBN | : |
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Fundamentals Of Novel Oxide Semiconductor Interfaces
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Fundamentals of III-V Semiconductor MOSFETs
| Author | : Serge Oktyabrsky |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 451 |
| Release | : 2010-03-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1441915478 |
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Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Contacts to Semiconductors
| Author | : L. J. Brillson |
| Publisher | : William Andrew |
| Total Pages | : 712 |
| Release | : 1993-12-31 |
| Genre | : Science |
| ISBN | : |
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. It is directed to microelectronics and optoelectronics industry researchers, designers, prototype builders, and process engineers. Researchers in physics, applied physics, electrical engineering and the materials science will also find this book an essential reference.
Surfaces and Interfaces of Metal Oxide Thin Films, Multilayers, Nanoparticles and Nano-composites
| Author | : Alejandro G. Roca |
| Publisher | : Springer Nature |
| Total Pages | : 289 |
| Release | : 2021-09-20 |
| Genre | : Technology & Engineering |
| ISBN | : 3030740730 |
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This book provides a general overview and current state of the art of different types of metal oxide nanomaterials, either in nanoparticles or thin film structure. It covers from the development and optimization of different nanofabrication/synthesis techniques for nanostructures which are currently the attention of the research community, the study of the structure and interactions by different characterization techniques of heterostructured materials and the final impact in different applications such as nanotherapy, data storage, super magnets, high-frequency devices. The book’s 13 chapters provide deep insight into the intriguing science of oxide materials and include contributions on novel technologies to fabricate nanomaterials with a broad range of functional properties (semiconducting, magnetic, ferroelectric, thermoelectric, optical, flexible and mechanical). This book is intended to the experts for consolidation of their knowledge but also for students who aim to learn and get basics of nanostructured metal oxides in diverse forms.
Fundamentals of Semiconductor Devices
| Author | : Edward S. Yang |
| Publisher | : McGraw-Hill Companies |
| Total Pages | : 376 |
| Release | : 1978 |
| Genre | : Technology & Engineering |
| ISBN | : |
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Integration of Functional Oxides with Semiconductors
| Author | : Alexander A. Demkov |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 284 |
| Release | : 2014-02-20 |
| Genre | : Technology & Engineering |
| ISBN | : 146149320X |
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This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO
| Author | : Noboru Kimizuka |
| Publisher | : John Wiley & Sons |
| Total Pages | : 344 |
| Release | : 2016-10-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1119247365 |
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Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium–gallium–zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC-IGZO in flat-panel displays and LSI devices. Key features: Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO Presents crystallographic overviews of IGZO and related compounds. Offers an in-depth understanding of CAAC-IGZO. Explains the fabrication method of CAAC-IGZO thin films. Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience. Describes the manufacturing process the CAAC-IGZO transistors and introduces the device application using CAAC-IGZO.
Amorphous Oxide Semiconductors
| Author | : Hideo Hosono |
| Publisher | : John Wiley & Sons |
| Total Pages | : 644 |
| Release | : 2022-05-17 |
| Genre | : Technology & Engineering |
| ISBN | : 1119715652 |
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AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
Fundamentals of Semiconductor Processing Technology
| Author | : Badih El-Kareh |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 605 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461522099 |
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The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Fundamentals of Solid-State Electronics
| Author | : Chih-Tang Sah |
| Publisher | : World Scientific Publishing Company |
| Total Pages | : 212 |
| Release | : 1996-09-30 |
| Genre | : Technology & Engineering |
| ISBN | : 9813103043 |
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This Solution Manual, a companion volume of the book, Fundamentals of Solid-State Electronics, provides the solutions to selected problems listed in the book. Most of the solutions are for the selected problems that had been assigned to the engineering undergraduate students who were taking an introductory device core course using this book. This Solution Manual also contains an extensive appendix which illustrates the application of the fundamentals to solutions of state-of-the-art transistor reliability problems which have been taught to advanced undergraduate and graduate students. This book is also available as a set with Fundamentals of Solid-State Electronics and Fundamentals of Solid-State Electronics — Study Guide.
