[Truncated abstract] Infrared (IR) detectors have many applications, from homeland security and defense, to medical imaging, to environmental monitoring, to astronomy, etc. Increasingly, the wave- length dependence of the IR radiation is becoming important in many applications, not just the total intensity of infrared radiation. There are many types of infrared detectors that can be broadly categorized as either photon detectors (narrow band-gap materials or quantum structures that provide the necessary energy transitions to generate free car- riers) or thermal detectors. Photon detectors generally provide the highest sensitivity, however the small transition energy of the detector also means cooling is required to limit the noise due to intrinsic thermal generation. This thesis is concerned with the tech- nique of resonant-cavity-enhancement of detectors, which is the process of placing the detector within an optically resonant cavity. Resonant-cavity-enhanced detectors have many favourable properties including a reduced detector volume, which allows improved operating temperature, or an improved signal to noise ratio (or some balance between the two), along with a narrow spectral bandwidth. ... Responsivity of another sample annealed for 20 hours at 250C in a Hg atmosphere (ex-situ) also shows resonant performance, but indicates significant shunting due the mirror layers. There is good agreement with model data, and the peak responsivity due to the absorber layer is 9.5×103 V/W for a 100 om ×100 om photoconductor at 80K. An effective lifetime of 50.4 ns is extracted for this responsivity measurement. The responsivity was measured as a function of varying field, and sweepout was observed for bias fields greater than 50 V/cm. The effective lifetime extracted from this measurement was 224 ns, but is an over estimate. Photodiodes were also fabricated by annealing p-type Hg(1x)Cd(x)Te for 10 hours at 250C in vacuum and type converting in a CH4/H2 reactive ion etch plasma process to form the n-p junction. There is some degradation to the mirror structure due to the anneal in vacuum, but a clear region of high reflection is observed. Measurements of current-voltage characteristics at various temperatures show diode-like characteristics with a peak R0 of 10 G measured at 80K (corresponding to an R0A of approximately 104 cm2. There was significant signal from the mirror layers, however only negligible signal from the absorber layer, and no conclusive resonant peaks.