Epitaxial Growth of III-Nitride Compounds

Epitaxial Growth of III-Nitride Compounds
Author: Takashi Matsuoka
Publisher: Springer
Total Pages: 228
Release: 2018-04-17
Genre: Technology & Engineering
ISBN: 3319766414

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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

III-Nitride Semiconductors

III-Nitride Semiconductors
Author: Omar Manasreh
Publisher: CRC Press
Total Pages: 832
Release: 2002-11-15
Genre: Technology & Engineering
ISBN: 9781560329954

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This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers. The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.

III-Nitride Electronic Devices

III-Nitride Electronic Devices
Author: Rongming Chu
Publisher: Academic Press
Total Pages: 540
Release: 2019-10
Genre: Electronic apparatus and appliances
ISBN: 0128175443

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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Optoelectronic Devices

Optoelectronic Devices
Author: M Razeghi
Publisher: Elsevier
Total Pages: 602
Release: 2004
Genre: Science
ISBN: 9780080444260

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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Iii-nitride Semiconductor Materials

Iii-nitride Semiconductor Materials
Author: Zhe Chuan Feng
Publisher: World Scientific
Total Pages: 442
Release: 2006-03-20
Genre: Technology & Engineering
ISBN: 1908979941

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III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

Author:
Publisher:
Total Pages: 690
Release:
Genre:
ISBN: 9780198501596

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Epitaxial Growth of III-nitride Nanostructures and Applications for Visible Emitters and Energy Generation

Epitaxial Growth of III-nitride Nanostructures and Applications for Visible Emitters and Energy Generation
Author: Bed Nidhi Pantha
Publisher:
Total Pages:
Release: 2009
Genre:
ISBN:

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III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as deep ultraviolet (DUV) photodetectors, solar cells, visible emitters, thermometric (TE) power generators, etc. Structural and optical properties in thicker AlN epilayers were found to be better than those in thinner AlN epilayers. Full-width at half maxima (FWHM) of x-ray diffraction (XRD) rocking curves as small as 63 and 437 arcsec were measured at (002) and (102) reflections, respectively in a thick AlN epilayer (4 mm). The dark current of the fabricated AlN detectors decreases drastically as AlN epilayer thickness increases. DUV photoluminescence (PL) spectroscopy and x-ray diffraction (XRD) measurements were employed to study the effect of biaxial stress in AlN epilayers grown on different substrates. Stress-induced band gap shift of 45 meV/GPa was obtained in AlN epilayers. The potential of InGaN alloys as TE materials for thermopower generation has been investigated. It was found that as In content increases, thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36Ga0.64N alloy, which is comparable to that of SiGe based alloys. Single phase In[subscript]xGa1[subscript]xN alloys inside the theoretically predicted miscibility gap region (x = 0.4 to 0.7) were successfully synthesized. A single peak of XRD [W-20] scans of the (002) plane in InGaN alloys confirms that there is no phase separation. Electrical properties and surface morphologies were found to be reasonably good. It was found that growth rate should be high enough (>400 nm/hr) to achieve high quality and single phase In[subscript]xGa1[subscript]xN alloys in this miscibility gap region. Mg-doped In[subscript]xGa1−[subscript]xN alloys were synthesized and characterized by Hall-effect and PL measurements for their application as visible emitters. P-type conductivity was measured up to x = 0.35 with accepter activation energy as low as 43 meV, which is about 4 times lower than that of Mg-doped p-type GaN. Resistivity as low as 0.4 [omega]-cm with a free hole concentration as high as 5x1018 cm-3 was measured in Mg-doped In0.22Ga0.--N. PL intensity decreased ~3 orders in magnitude when x increased from 0 to 0.22 in Mg-doped In[subscript]xGa1−[subscript]xN alloys.

Handbook of Crystal Growth

Handbook of Crystal Growth
Author: Tom Kuech
Publisher: Elsevier
Total Pages: 1384
Release: 2014-11-02
Genre: Science
ISBN: 0444633057

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Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

III-Nitride Semiconductors

III-Nitride Semiconductors
Author: M.O. Manasreh
Publisher: Elsevier
Total Pages: 463
Release: 2000-12-06
Genre: Science
ISBN: 0080534449

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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.