Epitaxial Growth And Characterization Of Sil Xgex Materials And Devices
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Author | : |
Publisher | : |
Total Pages | : 24 |
Release | : 1994 |
Genre | : |
ISBN | : |
Download Epitaxial Growth and Characterization of Si(l-x)Ge(x) Materials and Devices Book in PDF, Epub and Kindle
The current program of research was aimed at understanding the issues related to growth and doping of SiGe/Si heterostructures by gas-source MBE, studying the transport properties of the alloys, determining the fundamental material parameters and designing and demonstrating electronic and optoelectronic devices. The specific electronic device is the HBT with high Ge-containing base layers, and the optoelectronic devices are detectors, photoreceivers, and electro-optic modulators. The overall objective is to demonstrate, reliably and reproducibly, the feasibility of integrating SeGe-based optoelectronics with Si-based VLSI technology. We summarize below some of the highlights of the program related to work done in the last year. jg p.3.
Author | : Pallab Bhattacharya |
Publisher | : |
Total Pages | : 38 |
Release | : 1997 |
Genre | : |
ISBN | : |
Download Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices Book in PDF, Epub and Kindle
The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Author | : Bernd O. Kolbesen (Chemiker.) |
Publisher | : The Electrochemical Society |
Total Pages | : 568 |
Release | : 1999 |
Genre | : Technology & Engineering |
ISBN | : 9781566772396 |
Download Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes Book in PDF, Epub and Kindle
Author | : V. Alexander Stefan, Editor |
Publisher | : Stefan University Press |
Total Pages | : 282 |
Release | : 2002 |
Genre | : Science |
ISBN | : 9781889545394 |
Download Crystal and Epitaxial Growth Book in PDF, Epub and Kindle
Author | : |
Publisher | : |
Total Pages | : 75 |
Release | : 2009 |
Genre | : |
ISBN | : 9789173936866 |
Download Epitaxial Growth and Characterization of SiC for High Power Devices Book in PDF, Epub and Kindle
Author | : J Matthews |
Publisher | : Elsevier |
Total Pages | : 401 |
Release | : 2012-12-02 |
Genre | : Science |
ISBN | : 0323152120 |
Download Epitaxial Growth Part A Book in PDF, Epub and Kindle
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Author | : A. Baldereschi |
Publisher | : |
Total Pages | : 344 |
Release | : 1988 |
Genre | : Compound semiconductors |
ISBN | : |
Download Epitaxial Electronic Materials Book in PDF, Epub and Kindle
Author | : Miroslav Kotrla |
Publisher | : Springer Science & Business Media |
Total Pages | : 588 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 9401003912 |
Download Atomistic Aspects of Epitaxial Growth Book in PDF, Epub and Kindle
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Author | : Guilei Wang |
Publisher | : Springer Nature |
Total Pages | : 115 |
Release | : 2019-09-20 |
Genre | : Technology & Engineering |
ISBN | : 9811500460 |
Download Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond Book in PDF, Epub and Kindle
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Author | : S. Pantellides |
Publisher | : CRC Press |
Total Pages | : 552 |
Release | : 2002-07-26 |
Genre | : Technology & Engineering |
ISBN | : 9781560329633 |
Download Silicon-Germanium Carbon Alloys Book in PDF, Epub and Kindle
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials