Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells

Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells
Author:
Publisher:
Total Pages: 12
Release: 2011
Genre:
ISBN:

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According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba and linear Dresselhaus (?1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (?3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as? 2!?1. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning? and?1. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying?3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.

Control of Spin-Orbit Interaction in Conventional Semiconductor Quantum Wells

Control of Spin-Orbit Interaction in Conventional Semiconductor Quantum Wells
Author: Jiyong Fu
Publisher:
Total Pages: 0
Release: 2018
Genre: Electronic books
ISBN:

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In this chapter, we demonstrate, focusing on GaAs quantum wells (QWs), a full control of spin-orbit (SO) interaction including both the Rashba and Dresselhaus terms in conventional semiconductor QWs. We determine the SO interaction in GaAs from single to double and triple wells, involving the electron occupation of either one or two subbands. Both the intraband and interband SO coefficients are computed. Two distinct regimes, depending on the QW width, for the control of SO terms, are found. Furthermore, we determine the persistent-spin-helix (PSH) symmetry points, where the Rashba and the renormalized (due to cubic corrections) Dresselhaus couplings are matched. These PSH symmetry points, at which quantum transport is diffusive (2D) for charge while ballistic (1D) for spin, are important for longtime and long-distance coherent spin control that is the keystone in spintronic devices.

Semiconductor Spintronics

Semiconductor Spintronics
Author: Thomas Schäpers
Publisher: Walter de Gruyter GmbH & Co KG
Total Pages: 428
Release: 2021-05-10
Genre: Science
ISBN: 3110639009

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This revised and expanded edition of the first comprehensive introduction to the rapidly-evolving field of spintronics covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Moreover, the book now also includes spin-based optics, topological materials and insulators, and the quantum spin Hall effect.

Spintronics Handbook, Second Edition: Spin Transport and Magnetism

Spintronics Handbook, Second Edition: Spin Transport and Magnetism
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
Total Pages: 530
Release: 2019-05-20
Genre: Science
ISBN: 0429784376

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The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Emerging Nanoelectronic Devices

Emerging Nanoelectronic Devices
Author: An Chen
Publisher: John Wiley & Sons
Total Pages: 570
Release: 2015-01-27
Genre: Technology & Engineering
ISBN: 1118447743

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Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.

Functional Materials

Functional Materials
Author: Dipti Ranjan Sahu
Publisher: BoD – Books on Demand
Total Pages: 126
Release: 2019-10-09
Genre: Technology & Engineering
ISBN: 1789840570

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Functional materials are important materials for any technological needs and the forefront of materials research. Development of functional materials and their effective applications in the frontier fields of cross-multidisciplinary research programs is unique. This book presents an overview of different types of functional materials, including synthesis, characterization and application, and up-to-date treatment of functional materials, which are needed for structural, magnetic, polymeric, electromagnetic, etc. applications. New topics based on polymeric materials and spintronic materials are given for possible applications. The chapters of the book provide a key understanding of functional materials. It is suitable for undergraduates, graduates, and professionals, including engineers, scientists, researchers, technicians, and technology managers.

Wide Bandgap Semiconductor Spintronics

Wide Bandgap Semiconductor Spintronics
Author: Vladimir Litvinov
Publisher: CRC Press
Total Pages: 240
Release: 2024-04-26
Genre: Technology & Engineering
ISBN: 1040029205

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This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap state—an anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the Bernevig–Huges–Zhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number |C |=2. The book explores and actively discusses semiconductor spintronics and proposes various device implementations along the way. Although writings on this topic appear in the current literature, this book is focused on the materials science side of the question, providing a theoretical background for the most common concepts of spin-electron physics. It covers generic topics in spintronics without entering into device specifics since its aim is to give instructions to be used in solving problems of a general and specific nature. It is intended for graduate students and will serve as an introductory course in this specific field of solid state theory and applications.

Memorial Volume For Shoucheng Zhang

Memorial Volume For Shoucheng Zhang
Author: Xiaoliang Qi
Publisher: World Scientific
Total Pages: 510
Release: 2021-08-24
Genre: Technology & Engineering
ISBN: 9811231729

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This book honors the remarkable science and life of Shoucheng Zhang, a condensed matter theorist known for his work on topological insulators, the quantum Hall effect, spintronics, superconductivity, and other fields. It contains the contributions displayed at the Shoucheng Zhang Memorial Workshop held on May 2-4, 2019 at Stanford University.

Green Computing with Emerging Memory

Green Computing with Emerging Memory
Author: Takayuki Kawahara
Publisher: Springer Science & Business Media
Total Pages: 214
Release: 2012-05
Genre: Computers
ISBN: 1461408113

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This volume describes computing innovation using non-volatile memory for a sustainable world. The text presents methods of design and implementation for non-volatile memory, allowing devices to be turned off normally when not in use, yet operate with full performance when needed.