Electronic, Optical, and Thermal Properties of Reduced-dimensional Semiconductors

Electronic, Optical, and Thermal Properties of Reduced-dimensional Semiconductors
Author: Shouting Huang
Publisher:
Total Pages: 177
Release: 2013
Genre:
ISBN:

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Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the size of Si/Ge core-shell NWs and corresponding quantum confinement is shown to be efficient for modifying both valence and conduction band offsets simultaneously. Our proposed approaches to control band offsets in nano-sized heterojunctions may be of practical interest for nanoelectronic and photovoltaic applications. Additionally, I also studied the lattice vibrational modes of Si/Ge core-shell NWs. Our calculations show that the internal strain induced by the lattice mismatch between core and shell plays an important role in significantly shifting the frequency of characteristic optical modes of core-shell NWs. In particular, our simulation demonstrates that these frequency shifts can be detected by Raman-scattering experiments, giving rise to a convenient and nondestructive way to obtain structural information of core-shell materials. Meanwhile, another type of collective modes, the radial breathing modes (RBM), is identified in Si-core/Ge-shell NWs and their frequency dependence is explained by an elastic media model. Our studied vibrational modes and their frequency evolution are useful for thermoelectric applications based on core-shell nanostructures. Then I studied optical properties and exciton spectra of 2D semiconducting carbon structures. The energy spectra and wavefunctions of excitons in the 2D graphene derivatives, i.e., graphyne and graphane, are found to be strongly modified by quantum confinement, making them qualitatively different from the usual Rydberg series. However, their parity and optical selection rules are preserved. Thus a one-parameter hydrogenic model is applied to quantitatively explain the ab initio exciton spectra, and allows one to extrapolate the electron-hole binding energy from optical spectroscopies of 2D semiconductors without costly simulations. Meanwhile, our calculated optical absorption spectrum and enhanced spin singlet-triplet splitting project graphyne, an allotrope of graphene, as a good candidate for intriguing energy and biomedical applications. Lastly, we report first-principles results on electronic structures of 2D graphenelike system, i.e., silicene. For planar and simply buckled silicene structures, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity ix by including many-electron effects. However, the other two recently proposed silicene structures exhibit a finite band gap, indicating that they are gapped semiconductors instead of expected Dirac-fermion semimetals. This finite band gap of the latter two structures is preserved even with the Ag substrate included. The gap opening is explained by the symmetry breaking of the buckled structures. Moreover, our GW calculation reveals enhanced many-electron effects in these 2D structures. Finally the band gap of the latter two structures can be tuned in a wide range by applying strain.

Strain Tuning of Thermal, Electrical and Optical Properties of Semiconductors

Strain Tuning of Thermal, Electrical and Optical Properties of Semiconductors
Author: Xianghai Meng
Publisher:
Total Pages: 222
Release: 2019
Genre:
ISBN:

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The discovery of graphene by mechanical exfoliation has opened a new realm of research. Compared to traditional 3D crystal structures, 2D materials are characterized by strong in-plane covalent bond and weak interlayer van der Waals force, giving them unique 2D crystal structure. In the past ten years, various 2D materials have been explored with very different electronic properties, ranging from wide band-gap insulators to conductors. Owing to the different bond strength, 2D materials behave differently in their electrical, thermal properties along the cross-plane and in-plane direction. In addition, the in-plane electrical, optical and thermal properties are also found to be anisotropic for some particular 2D materials due to the asymmetric crystal structure. Both the in-plane and cross-plane anisotropic properties of 2D materials give rise to a possibility to design the micro/nano devices in various applications. The intrinsic properties of TMDs can be further adjusted by external factors, such as electrical fields, temperature, magnetic field, et al. Among all the external stimulations, strain has been shown an effective method to control the electronic, thermal, optical properties of semiconductors. With the discovery of 2D materials, the application of strain tuning has been growing since the reduced dimensional structures can sustain much larger strains than bulk crystals. In this dissertation, in-plane anisotropic nonlinear optical nonlinearity is studies with an Intensity-scan spectroscopy at ambient conditions. Then a diamond anvil cell (DAC) device is employed to generate large strain on MoS2. With our home-built pico-second Transient Thermoreflectance technique, ~7x enhancement in cross-plane is observed due to the pressure/strain modified interlayer interaction. Moreover, photoluminescence and Raman spectroscopy are used to probe the impurity levels in BAs crystal. Pressure/Strain modified impurity level change will also have significant effect on this high thermal conductivity material. Lastly, a modified pico-second Transient Thermoreflectance system is developed to achieve simultaneous measurement on thermal conductivity and specific heat of materials

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors
Author: T.C. McGill
Publisher: Springer Science & Business Media
Total Pages: 338
Release: 2012-12-06
Genre: Science
ISBN: 146845661X

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This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Low-dimensional Semiconductors

Low-dimensional Semiconductors
Author: M. J. Kelly
Publisher: Clarendon Press
Total Pages: 569
Release: 1995-11-23
Genre: Science
ISBN: 0191590096

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This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.

Optical Properties of Semiconductors

Optical Properties of Semiconductors
Author: G. Martinez
Publisher: Springer Science & Business Media
Total Pages: 327
Release: 2013-06-29
Genre: Science
ISBN: 9401580758

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It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .

Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices

Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices
Author: M. Balkanski
Publisher: Springer Science & Business Media
Total Pages: 297
Release: 2013-03-14
Genre: Technology & Engineering
ISBN: 9401589658

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This volume on Advanced Electronic Technologies and Systems based on Low Dimensional Quantum Devices closes a three years series of NATO -AS!' s. The first year was focused on the fundamental properties and applications. The second year was devoted to Devices Based on Low-Dimensional Semiconductor Structures. The third year is covering Systems Based on Low-Dimensional Quantum Semiconductor Devices. The three volumes containing the lectures given at the three successive NATO -ASI's constitute a complete review on the latest advances in semiconductor Science and Technology from the methods of fabrication of the quantum structures through the fundamental physics am basic knowledge of properties and projection of performances to the technology of devices and systems. In the first volume: " Fabrication, Properties and Application of Low Dimensional Semiconductors" are described the practical ways in which quantum structures are produced, the present status of the technology, difficulties encountered, and advances to be expected. The basic theory of Quantum Wells, Double Quantum Wells and Superlattices is introduced and the fundamental aspects of their optical properties are presented. The effect of reduction of dimensionality on lattice dynamics of quantum structures is also discussed. In the second volume: " Devices Based on Low Dimensional Structures" the fundamentals of quantum structures and devices in the two major fields: Electro-Optical Devices and Pseudomorphic High Eectron Mobility Transistors are extensively discussed.

Optical Properties Of Low-dimensional Materials

Optical Properties Of Low-dimensional Materials
Author: Yoshihiko Kanemitsu
Publisher: World Scientific
Total Pages: 436
Release: 1996-01-18
Genre: Technology & Engineering
ISBN: 9814500542

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This book surveys recent experimental and theoretical studies on optical properties of low-dimensional materials, e.g., artificial crystals in zeolites, C60 and its related compounds, silicon nanostructures including porous Si, II-VI and III-V semiconductor quantum structures, and Pb-based natural quantum-well systems. The eight excellent detailed review articles are written by authorities on each field in Japan. All the materials introduced in this book yield new optical phenomena originating from their mesoscopic and low-dimensional characters contributing to a new research field of condensed matter and optical physics.

Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides

Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides
Author: Hadis Morkoç
Publisher: John Wiley & Sons
Total Pages: 883
Release: 2009-07-30
Genre: Technology & Engineering
ISBN: 3527628428

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The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

Optical Properties of III–V Semiconductors

Optical Properties of III–V Semiconductors
Author: Heinz Kalt
Publisher: Springer Science & Business Media
Total Pages: 209
Release: 2012-12-06
Genre: Science
ISBN: 3642582842

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This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.

The Physics of Low-dimensional Semiconductors

The Physics of Low-dimensional Semiconductors
Author: John H. Davies
Publisher: Cambridge University Press
Total Pages: 460
Release: 1998
Genre: Science
ISBN: 9780521484916

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The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.