Electronic And Material Characterization Of Sige And Sigec Epitaxial Layers
Download Electronic And Material Characterization Of Sige And Sigec Epitaxial Layers full books in PDF, epub, and Kindle. Read online free Electronic And Material Characterization Of Sige And Sigec Epitaxial Layers ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : Jeff J. Peterson |
Publisher | : |
Total Pages | : 634 |
Release | : 2002 |
Genre | : |
ISBN | : |
Download Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers Book in PDF, Epub and Kindle
Author | : Peter John Bjeletich |
Publisher | : |
Total Pages | : 480 |
Release | : 2004 |
Genre | : |
ISBN | : |
Download Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications Book in PDF, Epub and Kindle
Author | : A. Baldereschi |
Publisher | : |
Total Pages | : 344 |
Release | : 1988 |
Genre | : Compound semiconductors |
ISBN | : |
Download Epitaxial Electronic Materials Book in PDF, Epub and Kindle
Author | : John D. Cressler |
Publisher | : CRC Press |
Total Pages | : 373 |
Release | : 2017-12-19 |
Genre | : Technology & Engineering |
ISBN | : 1351834797 |
Download SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices Book in PDF, Epub and Kindle
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author | : Guilei Wang |
Publisher | : Springer Nature |
Total Pages | : 115 |
Release | : 2019-09-20 |
Genre | : Technology & Engineering |
ISBN | : 9811500460 |
Download Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond Book in PDF, Epub and Kindle
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Author | : Pallab Bhattacharya |
Publisher | : |
Total Pages | : 38 |
Release | : 1997 |
Genre | : |
ISBN | : |
Download Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices Book in PDF, Epub and Kindle
The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Author | : David Louis Harame |
Publisher | : The Electrochemical Society |
Total Pages | : 1242 |
Release | : 2004 |
Genre | : Science |
ISBN | : 9781566774208 |
Download SiGe--materials, Processing, and Devices Book in PDF, Epub and Kindle
Author | : Eugene A. Fitzgerald |
Publisher | : |
Total Pages | : 414 |
Release | : 1998 |
Genre | : Science |
ISBN | : |
Download Epitaxy and Applications of Si-Based Heterostructures: Volume 533 Book in PDF, Epub and Kindle
The April 13-17, 1998 symposium held in San Francisco offered an intriguing mix of SiGe device and circuit technology, and the latest developments in SiGE materials and SiGeC alloys. The 53 papers pivot around the themes of: technologies and devices; devices, processing, and characterization; photonics and optoelectronics; epitaxy of quantum structures; SiGeC alloys; and epitaxy of SiGe/ related materials. A sample title from each of the six parts includes: carrier transport and velocity overshoot in strained Si on SiGe heterostructures, device and fabrication issues of high-performance Si/SiGe FETS, photonic crystals based on macroporous silicon, stacked layers of self-assembled Ge islands, photoluminescence in strain compensated Si/SiGeC multiple quantum wells, and a novel layer-by-layer heteroepitaxy of germanium on silicon (100) surface. Annotation copyrighted by Book News, Inc., Portland, OR
Author | : David Harame |
Publisher | : The Electrochemical Society |
Total Pages | : 1136 |
Release | : 2008 |
Genre | : Electronic apparatus and appliances |
ISBN | : 1566776562 |
Download SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices Book in PDF, Epub and Kindle
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author | : Julius Hållstedt |
Publisher | : |
Total Pages | : 39 |
Release | : 2004 |
Genre | : |
ISBN | : |
Download Epitaxy and Characterization of SiGeC Layers Grown by Reduced Pressure Chemical Vapor Deposition Book in PDF, Epub and Kindle