Electron–Lattice Interactions in Semiconductors

Electron–Lattice Interactions in Semiconductors
Author: Yuzo Shinozuka
Publisher: CRC Press
Total Pages: 256
Release: 2021-03-29
Genre: Science
ISBN: 1000037657

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This book presents theoretical treatments on various electronic and atomic processes in non-metallic materials from a unified point of view. It starts with the basic properties of semiconductors, treating the system as a macroscopic association of electrons and ions. In their ground state, fruitful results are derived, such as the band theory for electrons in a periodic lattice and a useful concept of “hole.” The electron–lattice interaction is then introduced as a dynamical response of condensed matter when it is electronically excited. With the aid of proper configuration coordinate diagrams, various phenomena are precisely examined, including carrier scattering, polaron formation, lattice relaxation, Stokes shift and phonon side band in optical spectrum, intrinsic and extrinsic self-trapping, and structural changes. The book provides readers a deep understanding of the physics underlying these phenomena and excellent insight to develop their further research. Graduate students who have finished the basic study on solid-state physics and quantum mechanics and research scientists and engineers in materials science and engineering will benefit immensely from it.

Semiconductors

Semiconductors
Author: David K. Ferry
Publisher:
Total Pages: 0
Release: 2020
Genre: TECHNOLOGY & ENGINEERING
ISBN: 9780750324809

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This second edition discusses the importance of semiconductors along with their newest applications. The book introduces the ever-changing field of semiconductors, before covering chapters on electronic structure, lattice dynamics, transport structures, optical properties and electron-electron interaction. This edition has been extensively updated with the addition of new chapters on statistics and optics, two expanded chapters on transport, and examples of the most recent applications of semiconductors. The book offers the deepest insight yet into the field of semiconductors, providing essential reading for graduate students and industry specialists.

Lattice Dynamics And Semiconductor Physics: Festchrift For Professor Kun Huang

Lattice Dynamics And Semiconductor Physics: Festchrift For Professor Kun Huang
Author: Z Z Gan
Publisher: World Scientific
Total Pages: 632
Release: 1989-12-01
Genre: Science
ISBN: 9814507180

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This review volume consists of scientific articles representing the frontier and most advanced progress in the field of semiconductor physics and lattice dynamics.

Electron-Electron Interactions in Disordered Systems

Electron-Electron Interactions in Disordered Systems
Author: A.L. Efros
Publisher: Elsevier
Total Pages: 703
Release: 2012-12-02
Genre: Science
ISBN: 044460099X

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``Electron-Electron Interactions in Disordered Systems'' deals with the interplay of disorder and the Coulomb interaction. Prominent experts give state-of-the-art reviews of the theoretical and experimental work in this field and make it clear that the interplay of the two effects is essential, especially in low-dimensional systems.

Introduction to Semiconductor Theory

Introduction to Semiconductor Theory
Author: Andreĭ Ivanovich Anselʹm
Publisher: Mir Publishers
Total Pages: 668
Release: 1981
Genre: Science
ISBN:

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Exploring Electron-Electron Interactions in Solid-State Physics

Exploring Electron-Electron Interactions in Solid-State Physics
Author: Claribel Celia
Publisher:
Total Pages: 0
Release: 2023-11-04
Genre: Art
ISBN: 9788312272537

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Introduction In this thesis, we delve into the application of quantum mechanics to electrons in solids, a concept initially introduced by Sommerfeld [1]. At the outset, this approach assumed that all valence electrons were free, effectively disregarding both electron-electron and electron-lattice interactions within the model. These two interactions serve as the central focus of our investigation. Free-Electron Theory The free-electron theory effectively accounted for the small heat capacity and magnetic susceptibility of metals. At finite temperatures, the number of electrons contributing to thermal or transport properties is proportional to kBT divided by EF, where EF represents the Fermi energy. Consequently, properties such as specific heat scale with an order of magnitude of kBT divided by EF. Formation of Energy Bands Within a solid, numerous atomic orbitals overlap with each other, resulting in a complex interplay of electronic states. If we commence with N atomic levels, this leads to N^2 molecular orbitals. Half of these molecular orbitals possess lower energies compared to the atomic energies, while the other half exhibit higher energies. The energy gap between these "molecular levels" diminishes as atoms approach one another, eventually forming a quasi-continuous spectrum of energy levels known as an energy band. This assumption, although reasonable, should be considered alongside the presence of closely spaced energy levels. Metals and Insulators The formation of energy bands is depicted schematically in Figure 1.1. In band theory, a clear distinction arises between metals and insulators. A material hosting one or more partially filled bands is categorized as a metal. At absolute zero temperature, electrons occupy energy states up to a maximum energy level known as the Fermi energy (EF), leaving higher energy states unoccupied. When an electric field is applied, electrons can freely migrate to these empty higher energy states, enabling electrical conduction. Prominent examples of such materials include alkali metals found in the periodic table, such as Li, Na, K, Rb, and Cs. Conversely, insulators (or semiconductors) present a different scenario, with lower-energy bands being fully occupied, while higher-energy bands remain unoccupied. An energy gap (Eg) exists between these occupied and unoccupied bands. Consequently, the density of states (N(E)) at the Fermi energy (EF) is zero for insulators. Figure 1.2 illustrates the density of states for a typical metal. Conclusion This thesis explores the intricacies of these interactions and energy bands, shedding light on the fundamental distinctions between metals and insulators, and their implications for the behavior of electrons in solids.

Problems of Linear Electron (Polaron) Transport Theory in Semiconductors

Problems of Linear Electron (Polaron) Transport Theory in Semiconductors
Author: M. I. Klinger
Publisher: Elsevier
Total Pages: 950
Release: 2017-05-04
Genre: Science
ISBN: 1483158195

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Problems of Linear Electron (Polaron) Transport Theory in Semiconductors summarizes and discusses the development of areas in electron transport theory in semiconductors, with emphasis on the fundamental aspects of the theory and the essential physical nature of the transport processes. The book is organized into three parts. Part I focuses on some general topics in the theory of transport phenomena: the general dynamical theory of linear transport in dissipative systems (Kubo formulae) and the phenomenological theory. Part II deals with the theory of polaron transport in a crystalline semiconductor. The last part contains a critical account of electron transport in disordered systems, including amorphous substances, with allowance for polaron effects.

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
Author: Osamu Ueda
Publisher: Springer Science & Business Media
Total Pages: 618
Release: 2012-09-24
Genre: Technology & Engineering
ISBN: 1461443369

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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Basic Semiconductor Physics

Basic Semiconductor Physics
Author: Chihiro Hamaguchi
Publisher: Springer Science & Business Media
Total Pages: 581
Release: 2009-12-09
Genre: Science
ISBN: 3642033032

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When the ?rst edition ofBasic Semiconductor Physics was published in 2001, there were already many books, review papers and scienti?c journals de- ing with various aspects of semiconductor physics. Since many of them were dealing with special aspects of newly observed phenomena or with very f- damental physics, it was very di?cult to understand the advanced physics of semiconductors without the detailed knowledge of semiconductor physics. For this purpose the author published the ?rst edition for the readers who are involved with semiconductor research and development. Basic Semiconductor Physics deals with details of energy band structures, e?ective mass eq- tion and k·p perturbation, and then describes very important phenomena in semiconductors such as optical, transport, magnetoresistance, and quantum phenomena. Some of my friends wrote to me that the textbook is not only basic but advanced, and that the title of the book does not re?ect the c- tents. However, I am still convinced that the title is appropriate, because the advanced physics of semiconductor may be understood with the knowledge of the fundamental physics. In addition new and advanced phenomena - served in semiconductors at an early time are becoming well-known and thus classi?ed in basic physics. After the publication of the ?rst edition, many typographical errors have been pointed out and the corrected version was published in 2006. The p- lisher and my friends persuade me to revise the book adding new chapters, keeping the subject at the appropriate level.

Phonons in Semiconductor Nanostructures

Phonons in Semiconductor Nanostructures
Author: J.P. Leburton
Publisher: Springer Science & Business Media
Total Pages: 490
Release: 2012-12-06
Genre: Science
ISBN: 9401116830

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In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots.