Electrical And Optical Characterization Of Group Iii Nitride Alloys For Solar Energy Conversion
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Author | : Rebecca Elizabeth Jones |
Publisher | : |
Total Pages | : 314 |
Release | : 2008 |
Genre | : |
ISBN | : |
Download Electrical and Optical Characterization of Group III-nitride Alloys for Solar Energy Conversion Book in PDF, Epub and Kindle
Author | : Tao Peng |
Publisher | : |
Total Pages | : 86 |
Release | : 1997 |
Genre | : |
ISBN | : |
Download Optical Properties of Group III Nitride Alloys Book in PDF, Epub and Kindle
Author | : James H. Edgar |
Publisher | : Institution of Electrical Engineers |
Total Pages | : 328 |
Release | : 1994 |
Genre | : Science |
ISBN | : |
Download Properties of Group III Nitrides Book in PDF, Epub and Kindle
The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.
Author | : Ayse Erol |
Publisher | : Springer Science & Business Media |
Total Pages | : 607 |
Release | : 2008-01-12 |
Genre | : Technology & Engineering |
ISBN | : 3540745297 |
Download Dilute III-V Nitride Semiconductors and Material Systems Book in PDF, Epub and Kindle
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author | : Ayse Erol |
Publisher | : Springer |
Total Pages | : 592 |
Release | : 2009-09-02 |
Genre | : Technology & Engineering |
ISBN | : 9783540842996 |
Download Dilute III-V Nitride Semiconductors and Material Systems Book in PDF, Epub and Kindle
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author | : Mahmoud Omar Manasreh |
Publisher | : |
Total Pages | : |
Release | : 2002 |
Genre | : Nitrides |
ISBN | : |
Download III-nitride Semiconductors Book in PDF, Epub and Kindle
Author | : Hai Lu |
Publisher | : |
Total Pages | : 300 |
Release | : 2003 |
Genre | : |
ISBN | : |
Download Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications Book in PDF, Epub and Kindle
Author | : |
Publisher | : |
Total Pages | : 0 |
Release | : 1999 |
Genre | : |
ISBN | : |
Download Nitrogen-Induced Modification of the Electronic Structure of Group III-N-V Alloys: Preprint Book in PDF, Epub and Kindle
Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lowersub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modification of the conduction-band structure profoundly affects the optical and electrical properties of the III-N-V alloys.
Author | : Feng Chi |
Publisher | : Frontiers Media SA |
Total Pages | : 202 |
Release | : 2022-02-02 |
Genre | : Science |
ISBN | : 2889742326 |
Download Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices Book in PDF, Epub and Kindle
Author | : |
Publisher | : |
Total Pages | : 84 |
Release | : 2008 |
Genre | : |
ISBN | : |
Download Innovative Growth and Defect Analysis of Group III - Nitrides for High Speed Electronics Book in PDF, Epub and Kindle
The project focused on novel techniques in growth and characterization which may enhance group III - nitride applications. On the growth side nitride deposition on diamond templates was characterized as the most promising novel growth techniques. The continuing progress can be supported applying the novel characterization technique described below. Local inhomogeneities are a common feature in group III - nitrides. With standard characterization methods such materials cannot be properly evaluated. Multiple group III - nitride epilayers were investigated utilizing VEELS in combination with high resolution TEM in order to characterize the materials in high spatial and energy resolution. It was found that possible side effects such as sample damage due to electron irradiation or falsified results due to retardation effects can be avoided if proper sample treatment is applied. It is assumed that the occurrence of local electronic transitions in close vicinity to interfaces is due to the presence of local point or surface defects. For the first time it may become possible to investigate the impact of such defects on the performance of devices. For the InGaN alloy system nano-cluster formation which changes optical responses was investigated. It was found that the III-V compound InN exists as a composite InN:In material. InN commonly exhibits multiple optical responses including an interface and/or surface related effect, which triggered confusing scientific models in the past. The prospect of exploiting multiple energy transitions within ONE material offers completely new alternatives for novel device development.