Doping Engineering for Front-End Processing:

Doping Engineering for Front-End Processing:
Author: B. J. Pawlak
Publisher: Cambridge University Press
Total Pages: 336
Release: 2014-06-05
Genre: Technology & Engineering
ISBN: 9781107408548

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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Doping Engineering for Front-End Processing: Volume 1070

Doping Engineering for Front-End Processing: Volume 1070
Author: Materials Research Society. Meeting Symposium E.
Publisher:
Total Pages: 344
Release: 2008-10-17
Genre: Technology & Engineering
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Si Front-End Processing: Volume 669

Si Front-End Processing: Volume 669
Author: Erin C. Jones
Publisher:
Total Pages: 362
Release: 2001-12-14
Genre: Science
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
Author: Aditya Agarwal
Publisher:
Total Pages: 448
Release: 2001-04-09
Genre: Technology & Engineering
ISBN:

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This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

Doping Engineering for Device Fabrication: Volume 912

Doping Engineering for Device Fabrication: Volume 912
Author: B. J. Pawlak
Publisher:
Total Pages: 240
Release: 2006-10-11
Genre: Science
ISBN:

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This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.

Simulation of Semiconductor Processes and Devices 2007

Simulation of Semiconductor Processes and Devices 2007
Author: Tibor Grasser
Publisher: Springer Science & Business Media
Total Pages: 472
Release: 2007-09-18
Genre: Computers
ISBN: 3211728600

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The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites

Si Front-end Processing

Si Front-end Processing
Author:
Publisher:
Total Pages: 320
Release: 1999
Genre: Semiconductor doping
ISBN:

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Introduction to Microfabrication

Introduction to Microfabrication
Author: Sami Franssila
Publisher: John Wiley & Sons
Total Pages: 534
Release: 2010-10-29
Genre: Technology & Engineering
ISBN: 1119991897

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This accessible text is now fully revised and updated, providing an overview of fabrication technologies and materials needed to realize modern microdevices. It demonstrates how common microfabrication principles can be applied in different applications, to create devices ranging from nanometer probe tips to meter scale solar cells, and a host of microelectronic, mechanical, optical and fluidic devices in between. Latest developments in wafer engineering, patterning, thin films, surface preparation and bonding are covered. This second edition includes: expanded sections on MEMS and microfluidics related fabrication issues new chapters on polymer and glass microprocessing, as well as serial processing techniques 200 completely new and 200 modified figures more coverage of imprinting techniques, process integration and economics of microfabrication 300 homework exercises including conceptual thinking assignments, order of magnitude estimates, standard calculations, and device design and process analysis problems solutions to homework problems on the complementary website, as well as PDF slides of the figures and tables within the book With clear sections separating basic principles from more advanced material, this is a valuable textbook for senior undergraduate and beginning graduate students wanting to understand the fundamentals of microfabrication. The book also serves as a handy desk reference for practicing electrical engineers, materials scientists, chemists and physicists alike. www.wiley.com/go/Franssila_Micro2e

Rapid Thermal and Other Short-time Processing Technologies II

Rapid Thermal and Other Short-time Processing Technologies II
Author: Dim-Lee Kwong
Publisher: The Electrochemical Society
Total Pages: 458
Release: 2001
Genre: Technology & Engineering
ISBN: 9781566773157

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"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."