Design, Simulation and Characterization of Silicon Compatible Light Emitting Devices for Optical Interconnects

Design, Simulation and Characterization of Silicon Compatible Light Emitting Devices for Optical Interconnects
Author: Brandon Fairfield Redding
Publisher:
Total Pages:
Release: 2010
Genre: Erbium
ISBN: 9781124241203

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Silicon photonics is well suited to overcome the interconnect bottleneck currently limiting performance in electronic integrated circuits. Photonic interconnects benefit from higher bandwidth, reduced power consumption, and improved scaling with device size relative to their electronic counterparts. Realization of photonic interconnects on a Si platform would enable monolithic integration of electronic and photonic elements, thereby leveraging the considerable infrastructure developed by the Si electronics industry. Inspired by this goal, researchers in the field of Si microphotonics have demonstrated most of the capabilities required for optical communication, including waveguides, modulators, filters, switches and detectors. The key element missing from the Si photonics toolkit remains a monolithic light source. In this work, we study two of the most promising materials in the search for a Si based light source: silicon nanocrystals (Si-nc) and erbium doped glass (Er:SiO 2). We developed fabrication processes for both of these materials and performed extensive material characterization to acquire the parameters governing their respective rate equation models. We then used our model to design a series of light emitting devices. We first designed Si-nc distributed Bragg reflector (DBR) microcavities for enhanced spontaneous emission and lasing. The optimized vertically emitting structure exhibited a quality factor of 115 and a peak luminescence enhancement factor of 14.5. We then fabricated a device based on our modeling and observed an experimental quality factor of 140 and an enhancement factor of 15.2. We also applied our simulation tool to investigate amplification and enhanced spontaneous emission in Er:SiO 2 based devices. Due to the low refractive index of Er:SiO 2, we presented a horizontal slot geometry in which the Er:SiO 2 layer is sandwiched between Si layers. We used a modesolver to optimize this geometry and then integrated it in a ring microcavity to study enhanced spontaneous emission. Simulations of the optimized device predicted a 35 fold enhancement in the peak luminescence. We then sought to address the requirements of a Si compatible light source for optical interconnects by designing an electrically pumped, complementary metal-oxide-semiconductor (CMOS) compatible laser with telecom wavelength emission. Leveraging the efficient electroluminescence (EL) in Si-nc films and the telecom wavelength lasing capabilities of Er:SiO 2, we proposed integrating the two materials in a concentric microdisk structure. In the proposed structure, EL from an inner Si-nc disk acts as an optical pump for an Er:SiO 2 laser in the outer disk. We used our modeling tool to confirm the proposed device behavior and optimize the geometry. We then fabricated a series of preliminary light emitting structures including Si-nc microdisks, Si-nc microgears, and concentric Si-nc/SiO 2 and Si-nc/Er:SiO 2 microdisks. We developed two experimental characterization setups for studying whispering gallery modes (WGMs) in these raised resonators, one based on collecting emission in the far-field and the other based on coupling emission to a tapered fiber. We performed the first comparison of these characterization techniques, discussed their relative merits, and identified the regimes of operation in which each is appropriate. Using these characterization techniques, we tested our Si-nc microdisks, microgears and concentric microdisks. We then performed the first investigation of microgear resonators using a Si based light emitting material. We then developed a fabrication process for Si-nc/Er:SiO 2 concentric microdisks in accordance with our two-stage laser design. Characterization of these concentric microdisks confirmed the existence of Si-nc based pump modes and Er:SiO 2 based signal modes. We also developed a semi-analytic model to predict lasing thresholds in this device in terms of Si-nc pump power. We subsequently derived an experimental technique to measure the Si-nc pump power in our fabricated device as an input parameter for our model. Based on this analysis, we identified the optimization required to achieve lasing in the proposed concentric microdisk structure. (Abstract shortened by UMI.).

Design, Fabrication, and Characterization of Novel Microcavities for Silicon-based Light Emitters

Design, Fabrication, and Characterization of Novel Microcavities for Silicon-based Light Emitters
Author: Elton L. Marchena
Publisher:
Total Pages:
Release: 2011
Genre: Holes
ISBN: 9781124479743

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The basic challenge in developing a Si-based light source is overcoming the emission inefficiency of crystalline Si due to its indirect band structure. Numerous efforts have led to an array of Si-compatible materials from which efficient light emission was attained; these materials include Si nanocrystals (Si-ncs), Er doped SiO 2 (Er:SiO 2), and strained Ge on Si. Based on two of the most promising Si-compatible light emitting materials, Si-nc and Er:SiO 2, we designed novel microcavities with the potential to be used in laser designs. We developed fabrication processes for both Si-nc and Er:SiO 2 materials and performed extensive material characterization to attain the parameters governing their behavior in the ADE-FDTD model. The cavities designed, fabricated, and characterized in this work consisted of an in-plane corner-cut square microcavity, microdisks and microtoroids, and a concentric microdisk structure designed for a two-stage, CMOS-compatible Si laser. The waveguide-coupled corner-cut square cavity was fabricated in-plane using E-beam lithography and selective dry etching. Both the lithography and etch processes were optimized to achieve smooth and vertical cavity sidewalls. We experimentally characterized this structure using lensed tapered fibers and saw excellent agreement with the simulated predictions. We identified an optimum corner-cut length which improved the Q-factor for a square cavity by as much as 2x. We then focused on developing light emitting devices using the Si-nc and Er:SiO 2 materials. While neither of these materials on their own satisfies all the requirements for an electrically pumped, CMOS-compatible laser at telecommunication wavelength, we proposed a concentric microdisk design which leverages the advantages of both materials. In the proposed structure, EL from an inner Si-nc microdisk acts as an optical pump for an Er:SiO 2 laser in the outer microdisk. Using our modeling tools, we confirmed the proposed device behavior and optimized the geometry. To demonstrate the feasibility of this device, we fabricated a series of preliminary light emitting structures, including Si-nc microdisks, Er:SiO 2 microdisks and -toroids, and Si-nc/Er:SiO 2 concentric microdisks. We developed two experimental characterization techniques to analyze the whispering-gallery modes (WGMs), one based on free-space collection from the edge of the microdisk and the other based on evanescent coupling to a tapered pulled fiber. The tapered fiber pulling process was refined to allow for in situ monitoring of the transmission and fiber diameter, which drastically improved the reliability and repeatability of this process. We compared these characterization setups and identified the regimes of operation in which each is appropriate. Using these characterization setups, we observed spectrometer limited Q-factors as high as 2x10 3 for Si-nc microdisks, comparable to the highest Q-factors reported in the literature, and Q-factors as high as 3x10 6 for Er:SiO 2 microtoroids, which are high enough to achieve lasing given an optimized Er concentration. We then developed a fabrication process for the Si-nc/Er:SiO 2 concentric microdisks in accordance with our two-stage laser design. Characterization of these concentric microdisks confirmed many of our predictions, including the existence of Si-nc based pump modes and Er:SiO 2 based signal modes, the mitigation of free carrier absorption (FCA) loss from the signal modes, and indirect excitation of the Er-based film via Si-nc luminescence. The existence of active and passive modes at both Si-nc based (pump: ~~00 nm) and Er:SiO 2 based (signal: ~1530 nm) wavelengths were in good agreement with the simulated predictions. The FCA loss, which is the dominant loss mechanism in Er doped Si-nc compositions, is almost entirely mitigated in the concentric microdisk structure by spatially separating the pump and signal modes. Having the pump and signal modes spatially separated allowed us to use the Si-nc luminescence as a optical pump for the Er:SiO 2 film. This indirect excitation mechanism was the first demonstration of an integrated two-stage pumping scheme applied to these materials. Finally, we developed a semi-analytical model to predict lasing thresholds in this concentric microdisk structure. Based on this analysis, we identify the material and device optimizations required to achieve lasing in the concentric microdisk structure. (Abstract shortened by UMI.).

Silicon Based Light Emitting Devices

Silicon Based Light Emitting Devices
Author: Mayuribala Mangrulkar
Publisher:
Total Pages: 76
Release: 2016-03-24
Genre:
ISBN: 9783659862885

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Design, Fabrication, and Characterization of High Density Silicon Photonic Components

Design, Fabrication, and Characterization of High Density Silicon Photonic Components
Author: Adam Jones
Publisher:
Total Pages: 124
Release: 2014
Genre:
ISBN:

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Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve efficiency while reducing on-chip area even as photonic components expand to fill application spaces no longer satisfied by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which efficient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling on a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the first experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modified racetrack resonator is then presented enabling extraction of insertion loss data for highly efficient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.

Silicon - Polymer Hybrid Integrated Microwave Photonic Devices for Optical Interconnects and Electromagnetic Wave Detection

Silicon - Polymer Hybrid Integrated Microwave Photonic Devices for Optical Interconnects and Electromagnetic Wave Detection
Author: Xingyu Zhang
Publisher:
Total Pages: 532
Release: 2015
Genre:
ISBN:

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The accelerating increase in information traffic demands the expansion of optical access network systems that require high-performance optical and photonic components. In short-range communication links, optical interconnects have been widely accepted as a viable approach to solve the problems that copper based electrical interconnects have encountered in keeping up with the surge in the data rate demand over the last decades. Low cost, ease of fabrication, and integration capabilities of low optical-loss polymers make them attractive for integrated photonic applications to support futuristic data communication networks. In addition to passive wave-guiding components, electro-optic (EO) polymers consisting of a polymeric matrix doped with organic nonlinear chromophores have enabled wide-RF-bandwidth and low-power active photonic devices. Beside board level passive and active optical components, on-chip micro- or nano-photonic devices have been made possible by the hybrid integration of EO polymers onto the silicon platform. In recent years, silicon photonics have attracted a significant amount of attentions, because it offers compact device size and the potential of complementary metal-oxide-semiconductor (CMOS) compatible photonic integrated circuits. The combination of silicon photonics and EO polymers can enable miniaturized and high-performance hybrid integrated photonic devices, such as electro-optic modulators, optical interconnects, and microwave photonic sensors. Silicon photonic crystal waveguides (PCWs) exhibit slow-light effects which are beneficial for device miniaturization. Especially, EO polymer filled silicon slotted PCWs further reduce the device size and enhance the device performance by combining the best of these two systems. The potential applications of these silicon-polymer hybrid integrated devices include not only optical interconnects, but also optical sensing and microwave photonics. In this dissertation, the design, fabrication, and characterization of several types of silicon-polymer hybrid photonic devices will be presented, including EO polymer filled silicon PCW modulators for on-chip optical interconnects, antenna-coupled optical modulators for electromagnetic wave detections, and low-loss strip-to-slot PCW mode converters. In addition, some polymer-based devices and silicon-based photonic devices will also be presented, such as traveling wave electro-optic polymer modulators based on domain-inversion directional couplers, and silicon thermo-optic switches based on coupled photonic crystal microcavities. Furthermore, some microwave (or RF) components such as integrated broadband bowtie antennas for microwave photonic applications will be covered. Some on-going work or suggested future work will also be introduced, including in-device pyroelectric poling for EO polymer filled silicon slot PCWs, millimeter- or Terahertz-wave sensors based on EO polymer filled plasmonic slot waveguide, low-loss silicon-polymer hybrid slot photonic crystal waveguides fabricated by CMOS foundry, logic devices based on EO polymer microring resonators, and so on.

Research on the Characteristics of Silicon MOS-Like Light- Emitting Structure by Utilizing the Technology of Field-Induced Optical Radiation Mechanisms

Research on the Characteristics of Silicon MOS-Like Light- Emitting Structure by Utilizing the Technology of Field-Induced Optical Radiation Mechanisms
Author: Kaikai Xu
Publisher:
Total Pages:
Release: 2017
Genre: Technology
ISBN:

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As a well-known core material, silicon is becoming one of the most promising materials of photonic integration field. The chapter provides the research of integrated silicon MOS-like light-emitting structure utilizing the technology of field-induced optical radiation mechanisms. The silicon light-emitting device (Si-LED) plays an important role in realizing the on-chip optical interconnects, but Si-LED integrating on bulk silicon is facing many challenges due to the hybrid integration. In addition to be fully compatible with the standard complementary-metal-oxide-semiconductor (CMOS) process technology, the Si-LED also avoids the challenges that are mentioned above through integrating with bulk silicon substrate monolithically.

Engineering of Light Emission Devices for Integration on Silicon

Engineering of Light Emission Devices for Integration on Silicon
Author: Lennon Yao Ting Lee
Publisher:
Total Pages:
Release: 2016
Genre:
ISBN:

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Silicon (Si) compatible lasers for applications in inter die and intra die optical interconnect systems and spectroscopy system have been an interesting topic for several years, but has yet to be practically demonstrated. One possible candidate material of a light source for inter die and intra die optical interconnect systems is germanium. Germanium (Ge) is compatible with Si and has a direct band gap of 0.8 eV, corresponding to the usual communication wavelength of 1550 nm. The small difference of 0.134 eV between the direct and indirect band gaps of Ge suggests the possibility of a radiative direct band gap transition. In the first part of this work, we focus on improving different aspects of Ge to reach the goal of lasing with a low threshold. The first aspect is the activated n-type dopant concentration and crystal quality, which we improve through a novel method of laser annealing, microwave annealing and co-implantation of dopants. The second aspect is the increase in the concentration of electron density in the active region through implementation of a unique electrical device design, known here as a gated microdisk resonator. The third aspect is the improvement in optical property by reducing the radiative recombination in the indirect valley through the fabrication of a photonic crystal. For spectroscopy applications, one candidate is thulium (Tm). We can dope the dielectrics with Tm3+ ions and pumped it at 1570nm taking advantage of light sources already used in telecommunications. This laser can be tuned to lase in the range from 1650nm to 2000nm depending on the matrix and the pump. This wavelength range can also be used in (light detection and ranging) LIDAR systems, gas sensing systems, spectroscopy on a chip and even to extend the range of wavelengths for telecommunications. In this second part of the work, we demonstrate photoluminescence with Tm-doped dielectrics and also show a method to optimize the microdisks for lasing with Tm.

Silicon Photonic Interferometric Modulators

Silicon Photonic Interferometric Modulators
Author: David Patel
Publisher:
Total Pages:
Release: 2019
Genre:
ISBN:

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"In recent years, the amount of traffic within data centers has increased to a point where electrical interconnects are being replaced by optical interconnects and pluggable modules. Silicon photonics, which uses the existing CMOS fabrication capabilities to develop integrated photonics, offers the ability to make compact devices in high volume with relatively better yield. This makes it a highly desired platform to develop optical transceivers and components for modern data centers. As such, it has recently reached the production phase of the technology development cycle. This thesis studies several devices that are applicablein leading data centers. A detailed analysis and characterization of a silicon Michelson modulator with short 500 um phase shifters and a low VpiLpi of 0.72 V-cm under reverse bias is presented. The optical modulation of reverse biased p-n and forward biased p-i-n junctions is investigated. For reverse bias operation, it is demonstrated that bandwidth can be increased with lower impedance drivers and the driver impedance limits the bitrate achievable. Furthermore, forward bias operation with pre-emphasized signals is shown to have clean eye diagrams up to 40 Gbps. Energy consumption is estimated for all cases of studies and their trade-offs are explained.The work on modulators is further developed by studying series push-pull traveling wave Mach-Zehnder modulators. Measurements of electrodes is compared with simulation validating the methods of increasing impedance and microwave effective index with T-shaped electrodes. Moreover, designs with two and three level implants are compared and it is concluded with measurements that a two level doping design is as good as the design with three level implants, thus reducing the number of masks and processing steps required. Another variation of modulators is the dual-drive modulators. Here, the spacing between electrodes can lead to coupling, which results in different responses depending on whether the modulator is driven single-endedly or differentially. The electro-optic frequency response of a four-port traveling-wave dual-drive modulator with relatively weak coupling amongst the electrodes is measured. It is shown that the electro-optic frequency response of the Mach-Zehnder modulator can be predicted with a 2x2 cascaded matrix model if the Mach-Zehnder modulator is symmetric and differentially driven. In recent years, the increase in data transfers has demanded that more bits be transmitted and received in a given bandwidth. The design and characterization of a silicon-on-insulator traveling-wave multi-electrode Mach-Zehnder modulator is reported in this thesis. This 2-bit electro-optic digital-to-analog converter is formed by dividing a series push-pull Mach-Zehnder modulator into two segments, one for each bit, thus allowing for PAM-4 modulation without using a digital-to-analog converter. The device is operated at speeds up to 50 Gbaud and thus generating 100 Gbps on a single wavelength without signal processing at the transmitter or the receiver. The pre-forward error correction bit error rate is estimated to be lower than the hard-decision forward error correction threshold of 3.8e-3 over 1 km of standard single-mode fiber.Another component that is crucial in optical networks is the optical switch. The optical switch has numerous applications in protection and restoration as well as in certain modern data center architectures. A 4x4 fully non-blocking crossbar switch fabric based on interferometric thermal phase shifters is developed and reported in this thesis. Here, heating is achieved using resistive elements around the silicon waveguide. Switching times of 5 us and 36 mW power consumption in an individual switching element is measured. As a proof of concept, the quality in degradation of switching is demonstrated by routing an input signal to some of the outputs of the switch." --