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| Author | : Jun Wang |
| Publisher | : |
| Total Pages | : 186 |
| Release | : 2010 |
| Genre | : |
| ISBN | : |
Keywords: emitter turn-off thyristor (ETO), insulated gate bipolar transistor (IGBT), Silicon carbide (SiC), metal-oxide-semiconductor field effect transistor, solid-state transformer (SST).
| Author | : |
| Publisher | : |
| Total Pages | : |
| Release | : 2001 |
| Genre | : |
| ISBN | : |
This research focuses on the design, characterization, modeling and analysis of high voltage Silicon Carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT) and emitter turn-off thyristors (ETO) to satisfy the stringent requirements of advanced power electronic systems. The loss information, frequency capability and switching ruggedness of these 10-kV SiC power devices are studied extensively in order to provide their application prospects in solid-state transformers (SST). Among 10-kV SiC power devices, SiC MOSFETs are of the greatest interest due to their lower specific on-resistance compared to silicon MOSFETs, and their inherently fast switching speed due to their majority carrier conduction mechanism. Therefore, 10-kV SiC MOSFETs are studied first in this dissertation. The characterization, modeling and analysis of 10-kV SiC MOSFETs were investigated extensively. The low losses and high switching frequency of 10-kV SiC MOSFETs were demonstrated in characterization study and a 4-kV 4 kW boost converter. The on-resistance of SiC MOSFETs increases rapidly with increased junction temperature and blocking voltage. This makes their conduction losses possibly unacceptable for applications where high DC supply voltages (more than 10-kV) and high temperature operation are used. This warrants the development of SiC bipolar devices (IGBTs and thyristors) to achieve smaller conduction losses due to the conductivity modulation of their thick drift layers, especially at elevated temperatures. Therefore, design, characterization and optimization of 10-kV SiC IGBT and ETO were dicussed. A 4H-SiC p-channel IGBT with improved conduction characteristics was developed and characterized experimentally as well as analyzed theoretically by numerical simulations. The device exhibited a differential on-resistance of 26 mOhm.cm^2 at a collector current density of 100 A/cm^2 at room temperature. An the SiC IGBT showed a turn-of.
| Author | : B Jayant Baliga |
| Publisher | : World Scientific |
| Total Pages | : 671 |
| Release | : 2023-09-18 |
| Genre | : Technology & Engineering |
| ISBN | : 9811284296 |
Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
| Author | : Tsunenobu Kimoto |
| Publisher | : John Wiley & Sons |
| Total Pages | : 565 |
| Release | : 2014-11-24 |
| Genre | : Technology & Engineering |
| ISBN | : 1118313526 |
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
| Author | : B. Jayant Baliga |
| Publisher | : World Scientific |
| Total Pages | : 526 |
| Release | : 2006-01-05 |
| Genre | : Technology & Engineering |
| ISBN | : 9812774521 |
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
| Author | : George Gibbs |
| Publisher | : |
| Total Pages | : 284 |
| Release | : 2016-10-01 |
| Genre | : |
| ISBN | : 9781681176437 |
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
| Author | : Liangchun Yu |
| Publisher | : |
| Total Pages | : 111 |
| Release | : 2010 |
| Genre | : Metal oxide semiconductor field-effect transistors |
| ISBN | : |
With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
| Author | : Ty Richard McNutt |
| Publisher | : |
| Total Pages | : 296 |
| Release | : 2004 |
| Genre | : Power semiconductors |
| ISBN | : |
| Author | : Xueqing Li |
| Publisher | : |
| Total Pages | : 334 |
| Release | : 2005 |
| Genre | : |
| ISBN | : |
| Author | : Pushpakaran Bejoy N |
| Publisher | : World Scientific |
| Total Pages | : 464 |
| Release | : 2019-03-25 |
| Genre | : Technology & Engineering |
| ISBN | : 9813237848 |
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
