ESD

ESD
Author: Steven H. Voldman
Publisher: John Wiley & Sons
Total Pages: 420
Release: 2005-12-13
Genre: Technology & Engineering
ISBN: 0470012900

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This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

The Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology

The Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology
Author: Xiuying Wang
Publisher: World Scientific Publishing Company
Total Pages: 880
Release: 1986
Genre: Technology & Engineering
ISBN:

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Patterning technology; Selective doping techniques; Materials; Rapid thermal annealing; Thin film technology; Amorphous silicon; Superconductor electronics; Advanced device technology; MOS and bipolar technology; Circuit design; Silicon on insulator technologies; Yield/reliability; Process characterization; Materials characterization; Fab operations.

Physics of Semiconductor Devices

Physics of Semiconductor Devices
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
Total Pages: 442
Release: 2007-05-08
Genre: Technology & Engineering
ISBN: 0306476223

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Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

Ion Implantation in Semiconductors

Ion Implantation in Semiconductors
Author: Ingolf Ruge
Publisher: Springer Science & Business Media
Total Pages: 519
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3642806600

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In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

Semiconductor Devices and Integrated Electronics

Semiconductor Devices and Integrated Electronics
Author: A. G. Milnes
Publisher: Springer Science & Business Media
Total Pages: 1014
Release: 2012-12-06
Genre: Science
ISBN: 9401170215

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For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Author: IEEE Staff
Publisher:
Total Pages:
Release: 2019-05-19
Genre:
ISBN: 9781728105826

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Technical scope of the conference covers power semiconductor devices and power integrated circuits, including but not limited to device physics, modeling, design, fabrication, materials, packaging and integration, device reliability, and device circuit interactions It will include 6 different technical tracks, namely, High Voltage Power Devices (HV), Low Voltage Devices and Power IC Device Technology (LVT), Power IC Design (ICD), GaN and Nitride Base Compound Materials (GaN), SiC and Other Materials (SiC), Module and Package Technologies (PK)