Charge Instability And Localization In Aluminum Gallium Nitride Gallium Nitride Heterostructures And Heterostructure Field Effect Transistors Studied By Kelvin Probe Microscopy
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Author | : Goutam Koley |
Publisher | : |
Total Pages | : 378 |
Release | : 2003 |
Genre | : Epitaxy |
ISBN | : |
Download Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy Book in PDF, Epub and Kindle
Author | : Myongseob Kim |
Publisher | : |
Total Pages | : 284 |
Release | : 2005 |
Genre | : |
ISBN | : |
Download Integration of CMOS and Electret for Autonomous Microsystems Book in PDF, Epub and Kindle
Author | : John W. McClory |
Publisher | : |
Total Pages | : 176 |
Release | : 2008 |
Genre | : Gallium nitride |
ISBN | : |
Download The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures Book in PDF, Epub and Kindle
AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 10^13 electrons/cm^2 or 10^10 neutrons/cm^2 due to positive charge build-up in the AlGaN layer. Measurement at room temperature after low-temperature irradiation showed a decrease in drain current due to the build up of charged defects along the AlGaN-GaN interface that decrease the mobility in the 2DEG and hence decrease the current. Gate leakage currents increased after low temperature irradiation and the increase was persistent after room temperature annealing. The increased leakage current was attributed to trap-assisted tunneling after application of the trap-assisted tunneling model. Comparison of the model to post-irradiation vs. pre-irradiation data showed that the dominant parameter change causing increased gate current was an increase in trap concentration.
Author | : Yunju Sun |
Publisher | : |
Total Pages | : 320 |
Release | : 2006 |
Genre | : |
ISBN | : |
Download Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications Book in PDF, Epub and Kindle
Author | : Hyungtak Kim |
Publisher | : |
Total Pages | : 133 |
Release | : 2003 |
Genre | : |
ISBN | : 9780496520169 |
Download Fabrication, Performance and Degradation Mechanism of Aluminum Gallium Nitride/gallium Nitride Heterostructure Field-effect Transistors Book in PDF, Epub and Kindle
Tremendous efforts to realize the potential of Al-GaN/GaN HFETs have been made over the last decade focusing on improving microwave power performance via optimizing material growth and semiconductor processing technologies. As the device performance is getting mature, the device's reliability becomes a major concern for manufacturability of commercially available AlGaN/GaN HFETs. However, comprehensive study on the reliability of these devices is still lacking.
Author | : Ozgur Aktas |
Publisher | : |
Total Pages | : 110 |
Release | : 1997 |
Genre | : |
ISBN | : |
Download Investigation of Aluminum Gallium Nitride/gallium Nitride Modulation Doped Field Effect Transistors Book in PDF, Epub and Kindle
Author | : Choudhury Jayant Praharaj |
Publisher | : |
Total Pages | : 238 |
Release | : 2004 |
Genre | : |
ISBN | : |
Download A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts Book in PDF, Epub and Kindle
Author | : Michael Ming Wong |
Publisher | : |
Total Pages | : 124 |
Release | : 1999 |
Genre | : |
ISBN | : |
Download Aluminum gallium nitride/gallium nitride heterojunction field-effect transistors grown by metalorganic chemical vapor deposition Book in PDF, Epub and Kindle
Author | : Yun-Ju Sun |
Publisher | : |
Total Pages | : 148 |
Release | : 2004 |
Genre | : |
ISBN | : |
Download Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistor Book in PDF, Epub and Kindle
Author | : Stephen J. Pearton |
Publisher | : Springer Science & Business Media |
Total Pages | : 383 |
Release | : 2006-07-06 |
Genre | : Technology & Engineering |
ISBN | : 1846283590 |
Download Gallium Nitride Processing for Electronics, Sensors and Spintronics Book in PDF, Epub and Kindle
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.