Metal – Semiconductor Contacts and Devices

Metal – Semiconductor Contacts and Devices
Author: Simon S. Cohen
Publisher: Academic Press
Total Pages: 435
Release: 2014-12-01
Genre: Technology & Engineering
ISBN: 1483217795

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VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.

Semiconductor Material and Device Characterization

Semiconductor Material and Device Characterization
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
Total Pages: 800
Release: 2015-06-29
Genre: Technology & Engineering
ISBN: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Semiconductor Physical Electronics

Semiconductor Physical Electronics
Author: Sheng S. Li
Publisher: Springer Science & Business Media
Total Pages: 514
Release: 2012-12-06
Genre: Science
ISBN: 146130489X

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The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

Metal-semiconductor Contacts

Metal-semiconductor Contacts
Author: E. H. Rhoderick
Publisher: Oxford University Press, USA
Total Pages: 280
Release: 1988
Genre: Language Arts & Disciplines
ISBN:

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This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.

Contacts to Semiconductors

Contacts to Semiconductors
Author: L. J. Brillson
Publisher: William Andrew
Total Pages: 712
Release: 1993-12-31
Genre: Science
ISBN:

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. It is directed to microelectronics and optoelectronics industry researchers, designers, prototype builders, and process engineers. Researchers in physics, applied physics, electrical engineering and the materials science will also find this book an essential reference.

Materials Concepts For Solar Cells (Second Edition)

Materials Concepts For Solar Cells (Second Edition)
Author: Thomas Dittrich
Publisher: World Scientific Publishing Company
Total Pages: 568
Release: 2018-01-30
Genre: Technology & Engineering
ISBN: 1786344505

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A modern challenge is for solar cell materials to enable the highest solar energy conversion efficiencies, at costs as low as possible, and at an energy balance as sustainable as necessary in the future. This textbook explains the principles, concepts and materials used in solar cells. It combines basic knowledge about solar cells and the demanded criteria for the materials with a comprehensive introduction into each of the four classes of materials for solar cells, i.e. solar cells based on crystalline silicon, epitaxial layer systems of III-V semiconductors, thin-film absorbers on foreign substrates, and nano-composite absorbers. In this sense, it bridges a gap between basic literature on the physics of solar cells and books specialized on certain types of solar cells.The last five years had several breakthroughs in photovoltaics and in the research on solar cells and solar cell materials. We consider them in this second edition. For example, the high potential of crystalline silicon with charge-selective hetero-junctions and alkaline treatments of thin-film absorbers, based on chalcopyrite, enabled new records. Research activities were boosted by the class of hybrid organic-inorganic metal halide perovskites, a promising newcomer in the field.This is essential reading for students interested in solar cells and materials for solar cells. It encourages students to solve tasks at the end of each chapter. It has been well applied for postgraduate students with background in materials science, engineering, chemistry or physics.

Ohmic Contacts to Semiconductors

Ohmic Contacts to Semiconductors
Author: Electrochemical Society
Publisher:
Total Pages: 372
Release: 1969
Genre: Electric contactors
ISBN:

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A Study of Metal Semiconductor Contacts on Indium Phosphide

A Study of Metal Semiconductor Contacts on Indium Phosphide
Author: G. Y. Robinson
Publisher:
Total Pages: 47
Release: 1979
Genre: Indium phosphide
ISBN:

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This report describes the research accomplished during a 14-month program of research on metal-semiconductor contacts on indium phosphide. Emphasis was placed on fabrication and characterization of ohmic contacts to p- and n-type InP using the deposition of thin metallic layers and subsequent heat treatment at elevated temperatures. Extensive use of Auger electron spectroscopy (AES) was made in order to obtain depth-composition profiles of the thin-film structures. For contact to n-type InP, three thin-film systems were investigated: Au, Ni, and a composite layer of Ni/Au/Ge. The specific contact resistance (r sub c) of the Ni/Au/Ge/In system varied in a systematic manner with heat-treatment temperature, and a minimum value of r sub c of .00003 ohm-sq cm at 325 C was found for N(D) = 3 x 10 to the 16th power/cc. Several nickel germanide phases, detected by AES and X-ray diffraction, were formed during heat treatment and were found to affect r sub c. For contact to p-type InP, a film consisting of Au/Mg was investigated. For heat treatment of the Au/Mg/InP system above 350 C, r sub c decreased with increasing signs of alloying at higher temperatures. The smoothest surface was obtained at 446 C for 50 minutes with r sub c approx. 0.0001 ohm/sq cm for N(A) = 6 x 10 to the 17th power/cc.