Analysis and Design of MOSFETs

Analysis and Design of MOSFETs
Author: Juin Jei Liou
Publisher: Springer Science & Business Media
Total Pages: 372
Release: 1998-09-30
Genre: Science
ISBN: 9780412146015

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Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Analysis and Design of MOSFETs

Analysis and Design of MOSFETs
Author: Juin J. Liou
Publisher: Springer
Total Pages: 349
Release: 1998
Genre: Science
ISBN: 9780792382515

Download Analysis and Design of MOSFETs Book in PDF, Epub and Kindle

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Analysis and Design of MOSFETs

Analysis and Design of MOSFETs
Author: Juin Jei Liou
Publisher: Springer Science & Business Media
Total Pages: 356
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461554152

Download Analysis and Design of MOSFETs Book in PDF, Epub and Kindle

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

MOSFET Modeling for Circuit Analysis and Design

MOSFET Modeling for Circuit Analysis and Design
Author: Carlos Galup-Montoro
Publisher: World Scientific
Total Pages: 445
Release: 2007
Genre: Technology & Engineering
ISBN: 9812568107

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This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

CMOS Analog Design Using All-Region MOSFET Modeling

CMOS Analog Design Using All-Region MOSFET Modeling
Author: Márcio Cherem Schneider
Publisher: Cambridge University Press
Total Pages: 505
Release: 2010-01-28
Genre: Computers
ISBN: 052111036X

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The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

MOSFET Theory and Design

MOSFET Theory and Design
Author: R. M. Warner
Publisher: Oxford University Press on Demand
Total Pages: 256
Release: 1999
Genre: Technology & Engineering
ISBN: 9780195116427

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Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter. Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models. MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.

CMOS Analog Design Using All-Region MOSFET Modeling

CMOS Analog Design Using All-Region MOSFET Modeling
Author: Márcio Cherem Schneider
Publisher: Cambridge University Press
Total Pages: 505
Release: 2010-01-28
Genre: Technology & Engineering
ISBN: 1139483692

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Covering the essentials of analog circuit design, this book takes a unique design approach based on a MOSFET model valid for all operating regions, rather than the standard square-law model. Opening chapters focus on device modeling, integrated circuit technology, and layout, whilst later chapters go on to cover noise and mismatch, and analysis and design of the basic building blocks of analog circuits, such as current mirrors, voltage references, voltage amplifiers, and operational amplifiers. An introduction to continuous-time filters is also provided, as are the basic principles of sampled-data circuits, especially switched-capacitor circuits. The final chapter then reviews MOSFET models and describes techniques to extract design parameters. With numerous design examples and exercises also included, this is ideal for students taking analog CMOS design courses and also for circuit designers who need to shorten the design cycle.

Low Voltage Power MOSFETs

Low Voltage Power MOSFETs
Author: Jacek Korec
Publisher: Springer Science & Business Media
Total Pages: 68
Release: 2011-03-30
Genre: Technology & Engineering
ISBN: 1441993207

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Low Voltage Power MOSFETs focuses on the design of low voltage power MOSFETs and the relation between the device structure and the performance of a power MOSFET used as a switch in power management applications. This SpringerBriefs close the gap between detailed engineering reference books and the numerous technical papers on the subject of power MOSFETs. The material presented covers low voltage applications extending from battery operated portable electronics, through point of load converters, internet infrastructure, automotive applications, to personal computers and server computers. The issues treated in this volume are explained qualitatively using schematic illustrations, making the discussion easy to follow for all prospective readers.

The Physics and Modeling of Mosfets

The Physics and Modeling of Mosfets
Author: Mitiko Miura-Mattausch
Publisher: World Scientific
Total Pages: 381
Release: 2008
Genre: Technology & Engineering
ISBN: 9812812059

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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Mosfet Modeling For Circuit Analysis And Design

Mosfet Modeling For Circuit Analysis And Design
Author: Carlos Galup-montoro
Publisher: World Scientific
Total Pages: 445
Release: 2007-02-27
Genre: Technology & Engineering
ISBN: 9814477974

Download Mosfet Modeling For Circuit Analysis And Design Book in PDF, Epub and Kindle

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.