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| Author | : Judith A. Hollingsworth |
| Publisher | : |
| Total Pages | : 16 |
| Release | : 1974 |
| Genre | : Aerial photography in geography |
| ISBN | : |
| Author | : Rafik Addou |
| Publisher | : Elsevier |
| Total Pages | : 434 |
| Release | : 2022-02-14 |
| Genre | : Technology & Engineering |
| ISBN | : 032390310X |
Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials
| Author | : Christina A. Knapek |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 165 |
| Release | : 2011-08-21 |
| Genre | : Science |
| ISBN | : 3642196713 |
The two experimental studies reported in this thesis contribute important new knowledge about phase transitions in two-dimensional complex plasmas: in one case a determination of the coupling parameter (ratio of mean potential to mean kinetic energy of the particles in an ensemble), and in the other a detailed characterization of the non-equilibrium recrystallization of a two-dimensional system. The latter results are used to establish the connection between structural order parameters and the kinetic energy, which in turn gives novel insights into the underlying physical processes determining the two-dimensional phase transition.
| Author | : Johann-Martin Spaeth |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 376 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 3642844057 |
Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.
| Author | : Jan Stehr |
| Publisher | : Woodhead Publishing |
| Total Pages | : 309 |
| Release | : 2018-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 0081020546 |
Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead
| Author | : Vijay Kumar |
| Publisher | : Elsevier |
| Total Pages | : 758 |
| Release | : 2022-11-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0323903592 |
Metal Oxide Defects: Fundamentals, Design, Development and Applications provides a broad perspective on the development of advanced experimental techniques to study defects and their chemical activity and catalytic reactivity in various metal oxides. This book highlights advances in characterization and analytical techniques to achieve better understanding of a wide range of defects, most importantly, state-of-the-art methodologies for controlling defects. The book provides readers with pathways to apply basic principles and interpret the behavior of metal oxides. After reviewing characterization and analytical techniques, the book focuses on the relationship of defects to the properties and performance of metal oxides. Finally, there is a review of the methods to control defects and the applications of defect engineering for the design of metal oxides for applications in optoelectronics, energy, sensing, and more. This book is a key reference for materials scientists and engineers, chemists, and physicists. Reviews advances in characterization and analytical techniques to understand the behavior of defects in metal oxide materials Introduces defect engineering applied to the design of metal oxide materials with desirable properties Discusses applications of defect engineering to enhance the performance of materials for a wide range of applications, with an emphasis on optoelectronics
| Author | : |
| Publisher | : |
| Total Pages | : 94 |
| Release | : 1970 |
| Genre | : Engineering geology |
| ISBN | : |
| Author | : M. Predeleanu |
| Publisher | : Elsevier |
| Total Pages | : 439 |
| Release | : 1997-06-18 |
| Genre | : Technology & Engineering |
| ISBN | : 0080544894 |
This collection of papers focus on advanced methods for predicting and avoiding the occurrence of defects in manufactured products. A new feature is included, namely, the influence of the processing-induced defects on the integrity of structures. The following topics are developed: damage modeling; damage evaluation and rupture; strain localization and instability analysis; formability characterization; prediction of shape inaccuracies; influence of defects on structural integrity. The main manufacturing operations are covered and various materials are examined, such as new and conventional metal alloys, ceramics, polymers and composites.
| Author | : D. Hull |
| Publisher | : Cambridge University Press |
| Total Pages | : 334 |
| Release | : 1996-08-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1107393183 |
This edition has been greatly enlarged and updated to provide both scientists and engineers with a clear and comprehensive understanding of composite materials. In describing both theoretical and practical aspects of their production, properties and usage, the book crosses the borders of many disciplines. Topics covered include: fibres, matrices, laminates and interfaces; elastic deformation, stress and strain, strength, fatigue crack propagation and creep resistance; toughness and thermal properties; fatigue and deterioration under environmental conditions; fabrication and applications. Coverage has been increased to include polymeric, metallic and ceramic matrices and reinforcement in the form of long fibres, short fibres and particles. Designed primarily as a teaching text for final-year undergraduates in materials science and engineering, this book will also interest undergraduates and postgraduates in chemistry, physics, and mechanical engineering. In addition, it will be an excellent source book for academic and technological researchers on materials.
| Author | : J. Doneker |
| Publisher | : Routledge |
| Total Pages | : 524 |
| Release | : 2017-11-22 |
| Genre | : Science |
| ISBN | : 1351456474 |
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
