Radiation Physics and Reliability Issues in III-V Compound Semiconductor Nanoscale Heterostructure Devices

Radiation Physics and Reliability Issues in III-V Compound Semiconductor Nanoscale Heterostructure Devices
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Total Pages: 0
Release: 1999
Genre:
ISBN:

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We have investigated the following three types of devices in this research program: (1) Heterojunction Bipolar Transistors (2) High Electron Mobility Transistors and (3) Resonant Tunneling Diodes. The following three types of radiation were used in our investigations: (a) Gamma radiation (b) Electron radiation and (c) Neutron radiation. Electrons constitute an important component of the trapped radiation in the earth's magnetic field (Van Allen's belt). Neutron and gamma radiation are encountered in the weapon's environment. Neutrons are also generated by the interaction of cosmic rays with earth's atmosphere.

Reliability And Radiation Effects In Compound Semiconductors

Reliability And Radiation Effects In Compound Semiconductors
Author: Allan H Johnston
Publisher: World Scientific
Total Pages: 376
Release: 2010-04-27
Genre: Technology & Engineering
ISBN: 9814467650

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This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.

Circular

Circular
Author:
Publisher:
Total Pages: 88
Release: 1995
Genre: Engineering
ISBN:

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Extended Defects in Semiconductors

Extended Defects in Semiconductors
Author: D. B. Holt
Publisher: Cambridge University Press
Total Pages: 625
Release: 2007-04-12
Genre: Science
ISBN: 1139463594

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A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Physical Limitations of Semiconductor Devices

Physical Limitations of Semiconductor Devices
Author: Vladislav A. Vashchenko
Publisher: Springer Science & Business Media
Total Pages: 337
Release: 2008-03-22
Genre: Technology & Engineering
ISBN: 0387745149

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Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Physics Briefs

Physics Briefs
Author:
Publisher:
Total Pages: 1162
Release: 1994
Genre: Physics
ISBN:

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