Physics-based Modeling and Analysis of Nonclassical Nanoscale CMOS with Circuit Applications
Author | : Weimin Zhang |
Publisher | : |
Total Pages | : |
Release | : 2006 |
Genre | : |
ISBN | : |
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A FinFET-based hybrid device, namely the inverted-T (IT) FET, is proposed for improving current drive per pitch by fabricating a single-gate fully-depleted (FD) SOI MOSFET in the unused portion of the pitch area. Physical insights regarding the design and performance of the ITFET are gained with the UFDG model in Spice3, combined with simulations done with the 3-D numerical simulator Davinci, with design goals to achieve good current-voltage characteristics, i.e., high Ion/pitch and high Ion/Ioff with acceptable V sub t. Its advantages in effecting a good design of a nanoscale SRAM cell and of a novel two-transistor floating-body memory cell (2TFBC) are proposed and analyzed.