Growth and Fabrication of Multi-Quantum Well Infrared Photodetectors

Growth and Fabrication of Multi-Quantum Well Infrared Photodetectors
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Total Pages: 63
Release: 2000
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A majority of infrared sensors used for imaging arrays operating in the long-wavelength infrared region between lambda = 8-12 micrometers are based on HgCdTe. This material system is unable to satisfy all of the requirements that are imposed by modern applications. Structural difficulties due to poor uniformity, high defect densities, and weak bond strengths cause difficulties in manufacturing large infrared focal plane array cameras. As an alternative, quantum well infrared photodetectors (QWIPs) utilizing intersubband absorption between GaAs wells and AlGaAs barriers were perfected. These QWIPs possess better uniformity in comparison to HgCdTe detectors, and QWIP imaging arrays have recently become commercially available. However, the responsivity of GaAs/AlGaAs QWIPs is still lower than HgCdTe detectors. In order to further improve the responsivity of QWIP detectors, the development of QWIPs with wells or barriers of OaInAsP instead of MOaAs has been developed.

Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications

Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications
Author: Sheng S. Li
Publisher:
Total Pages: 12
Release: 2002
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ISBN:
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Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3 - 5 micrometers mid-wavelength infrared (MWIR) and 8 - 12 micrometers long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: lambda(sub c)> 14 micrometers) detection in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, the multi-color QWIP required for advanced IR sensing and imaging applications have also been emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4- color) QWIPs using multi-stack quantum wells with different well width and depth and voltage-tunable triple-coupled quantum well (TCQW) structure for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated. In this paper, the design, fabrication, and characterization of a voltage-tunable 2-stack 3-color QWIP for MW/LW/LW IR detection and a 3-stack 3-color QWIP for detection in the water, ozone, and CO2 atmospheric blocking bands are depicted.

Fabrication of Tunable Quantum Well Infrared Photodetectors (QWIP), Polarization Sensitive QWIPs and Enhanced Coupling Grating Structures

Fabrication of Tunable Quantum Well Infrared Photodetectors (QWIP), Polarization Sensitive QWIPs and Enhanced Coupling Grating Structures
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Total Pages: 21
Release: 2005
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This project investigates the properties of intersubband reduced dimension devices based on quantum wells and quantum dots, which could be used for infrared detection. In the past few years, there has been active research on studying the performance characteristics of mid-wave infrared (MWIR, 3-5 m) and long-wave infrared (LWIR, 8-12 m) applications. Present-day photon detectors in this wavelength range need to be cooled to liquid nitrogen temperature or below. Quantum dot detectors are expected to display low dark current, large detectivity and better response at elevated temperature due to the longer lifetime of excited electrons due to greatly suppressed electron-phonon scattering. The responsivity and specific detectivity of QDIPs is significantly lower than those observed in mercury cadmium telluride (MCT) detectors. However, due to difficulties with the epitaxial growth of mercury based compounds, material defects cause problems with uniformity and operability across an array that continues to plague MCT focal plane arrays. QDIPs, on the other hand, are based on a comparatively mature GaAs technology and the uniformity of their response suggests that they can be incorporated into large area focal plane arrays (FPAs).

Quantum Well Infrared Photodetectors

Quantum Well Infrared Photodetectors
Author: Harald Schneider
Publisher: Springer
Total Pages: 258
Release: 2006-10-18
Genre: Science
ISBN: 3540363246
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Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Development of High Performance Multicolor Quantum Well Infrared Photodetectors and Studies of Enhancing Light Coupling and Radiation Effects in QWIPs

Development of High Performance Multicolor Quantum Well Infrared Photodetectors and Studies of Enhancing Light Coupling and Radiation Effects in QWIPs
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Total Pages: 128
Release: 1999
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In this report, we present the design, fabrication, and characterization of several high performance multi-color and broadband quantum well infrared photodetectors (QWIPs) for both MWIR and LWIR applications. The report covers tasks performed during the period from March 3, 1998 through July 10, 1999. A very high sensitivity, high-strain, multi-color triple-coupled (TC- ) QWIP using InGaAs/AlGaAs/InGaAs material systems has been developed in this project for LWIR multi-color detection. A two-stack InGaAs/AlGaAs/InGaAs TC-QWIP and InGaAs/AlGaAs TC-QWIP has been developed for the LWIR and MWIR dual-band detection. In addition, a high-strain InGaAs/GaAs TC-QWIP with and without two-dimensional (2-D) grating coupler has been designed, fabricated, and characterized for the LWIR detection. This device shows very high responsivity under 450 back-illumination. Several broadband (BB- ) QWIPs have been developed for the LWIR detection. These include (1) two-stack, five-well n-type InGaAs/AlGaAs broadband (BB- ) QWIPs with 3- and 7-period QWs in the unit cell, (2) 3- and 4-well n-type BB-QWIPs, and (3) two 3- and 4- well p-type BB-QWIPs. In addition, a three-stack InGaAs/AlGaAs/InGaAs BB TC-QWIP grown on GaAs substrate has been developed for LWIR detection, which has a FWHM spectral bandwidth twice larger than the single-stack TC-QWIP. Finally, a MWIR InGaAs/InAlAs TC-QWIP grown on InP substrate, operating up to T = 116K with excellent device performance, has also been demonstrated. Four journal papers and six conference papers have been published and presented from this work.

Intersubband Infrared Photodetectors

Intersubband Infrared Photodetectors
Author: V. Ryzhii
Publisher: World Scientific
Total Pages: 362
Release: 2003
Genre: Technology & Engineering
ISBN: 9789812383082
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Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.

Infrared Detectors

Infrared Detectors
Author: Antonio Rogalski
Publisher: CRC Press
Total Pages: 900
Release: 2010-11-15
Genre: Science
ISBN: 1420076728
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Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un

INGAP/GAAS Quantum Well Infrared Photodetectors

INGAP/GAAS Quantum Well Infrared Photodetectors
Author: N. Pan
Publisher:
Total Pages: 36
Release: 1997
Genre:
ISBN:
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The objective of this Phase II SBIR was to improve the quality of multi-quantum well materials suitable for infrared detector applications and to investigate novel bandgap engineering concepts utilizing InGaP/GaAs heterostructure materials. The subcontractor, Northwestern University, was successful in growing high quality InGaP/GaAs multi-quantum well materials by low pressure metal-organic chemical vapor deposition (MOCVD), and in demonstrating improved performance in the photodetector test structures fabricated from these materials. Most of the results in this report are from the research work at Northwestern University. The Prime contractor, Kopin corporation, was not successful in transferring the growth parameters for these materials from Northwestern University to their production-scale MOCVD reactors. No reportable results were obtained on the Kopin materials.