Semiconductor Nanocrystals

Semiconductor Nanocrystals
Author: Alexander L. Efros
Publisher: Springer Science & Business Media
Total Pages: 277
Release: 2013-06-29
Genre: Technology & Engineering
ISBN: 1475736770

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A physics book that covers the optical properties of quantum-confined semiconductor nanostructures from both the theoretical and experimental points of view together with technological applications. Topics to be reviewed include quantum confinement effects in semiconductors, optical adsorption and emission properties of group IV, III-V, II-VI semiconductors, deep-etched and self assembled quantum dots, nanoclusters, and laser applications in optoelectronics.

Group-IV Semiconductor Nanostructures: Volume 832

Group-IV Semiconductor Nanostructures: Volume 832
Author: Materials Research Society. Meeting
Publisher:
Total Pages: 440
Release: 2005-05-24
Genre: Science
ISBN:

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Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

Synthesis and Luminescent Properties of Silicon Nanocrystals

Synthesis and Luminescent Properties of Silicon Nanocrystals
Author: Antonio Coyopol-Solis
Publisher:
Total Pages:
Release: 2018
Genre: Technology
ISBN:

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Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.

Silicon Nanocrystals

Silicon Nanocrystals
Author: Lorenzo Pavesi
Publisher: John Wiley & Sons
Total Pages: 648
Release: 2010-02-02
Genre: Technology & Engineering
ISBN: 9783527629961

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This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.

Light Emission from Silicon, Progress Towards Si-based Optoelectronics

Light Emission from Silicon, Progress Towards Si-based Optoelectronics
Author: Jan Linnros
Publisher: Elsevier Publishing Company
Total Pages: 558
Release: 1999
Genre: Medical
ISBN:

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This volume contains the papers presented at Symposium B of the 1998 spring meeting of the European Materials Research Society (E-MRS). The symposium attracted well over 100 scientists engaged in one common goal - that of developing efficient light emitting Si-based structures. This included various technical approaches such as porous silicon, Si nanocrystals, rare-earth doping of Si, light emitting silicides, Si-based multilayer and alloy structures and SiGe structures. In this respect, the meeting had a more multidisciplinary approach than previous meetings, the main idea being a fruitful comparison of the different techniques that would also stimulate cross-disciplinary research. Generally, presentations at the conference revealed high scientific quality and several new findings and refinements of existing techniques were disclosed. One example was the much-debated report of optical gain from a structure containing Si nanocrystals. Another example was the dramatically improved stability of derivatised porous silicon. The technique of producing porous Si microcavities has been refined such that cavities of high optical quality may now be fabricated. The latest material to emerge as a candidate for a Si-based light emitting device has been iron silicide and room temperature operation has been reported. The interest is further motivated by the prospect of obtaining direct bandgap emission. The 90 collected papers represent about 80% of the submitted papers out of more than 140 accepted abstracts. The papers have been grouped according to subject although no ordering within each subgroup has been attempted. All invited papers have been placed in the foremost section to serve as reviews in each separate field.

Silicon and Silicide Nanowires

Silicon and Silicide Nanowires
Author: Yu Huang
Publisher: CRC Press
Total Pages: 486
Release: 2013-10-24
Genre: Technology & Engineering
ISBN: 9814303461

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Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.

Group-IV Semiconductor Nanostructures:

Group-IV Semiconductor Nanostructures:
Author: Leonid Tsybeskov
Publisher: Cambridge University Press
Total Pages: 430
Release: 2014-06-05
Genre: Technology & Engineering
ISBN: 9781107409118

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Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.