Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Elsevier
Total Pages: 456
Release: 2014-06-24
Genre: Computers
ISBN: 0857098098
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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Woodhead Publishing
Total Pages: 662
Release: 2019-06-15
Genre: Science
ISBN: 0081025858
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Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Emerging Non-Volatile Memories

Emerging Non-Volatile Memories
Author: Seungbum Hong
Publisher: Springer
Total Pages: 280
Release: 2014-11-18
Genre: Technology & Engineering
ISBN: 1489975373
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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Developments in Data Storage

Developments in Data Storage
Author: S. N. Piramanayagam
Publisher: John Wiley & Sons
Total Pages: 348
Release: 2011-10-11
Genre: Computers
ISBN: 1118096827
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A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.

Logic Non-volatile Memory

Logic Non-volatile Memory
Author: Charles Ching-Hsiang Hsu
Publisher: World Scientific
Total Pages: 319
Release: 2014
Genre: Technology & Engineering
ISBN: 9814460915
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Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance? This book is written to help you. It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book. This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits. All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.

Emerging Memory Technologies

Emerging Memory Technologies
Author: Yuan Xie
Publisher: Springer Science & Business Media
Total Pages: 321
Release: 2013-10-21
Genre: Technology & Engineering
ISBN: 144199551X
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This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.

Phase Change Memory

Phase Change Memory
Author: Naveen Muralimanohar
Publisher: Springer Nature
Total Pages: 122
Release: 2022-05-31
Genre: Technology & Engineering
ISBN: 3031017358
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As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

Non-volatile Memories

Non-volatile Memories
Author: Pierre-Camille Lacaze
Publisher: John Wiley & Sons
Total Pages: 308
Release: 2014-12-02
Genre: Technology & Engineering
ISBN: 111879012X
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Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Storage Systems for Non-volatile Memory Devices

Storage Systems for Non-volatile Memory Devices
Author: Xiaojian Wu
Publisher:
Total Pages:
Release: 2011
Genre:
ISBN:
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This dissertation presents novel approaches to the use of non-volatile memory devices in building storage systems. There are many types of non-volatile memory devices, and they usually have better performance than regular magnetic hard disks in terms of throughput and latency. This dissertation focused on two of them, NAND flash memory and Phase Change Memory (PCM). This work consisted of two parts. The first part was to design a high-performance hybrid storage system employing Solid State Drives that are build out of NAND flash memory and Hard Disk Drives. In this hybrid system, we proposed two different policies to improve its performance. One is to exploit the fact that the performances of Solid State Drive and Hard Disk Drive are asymmetric and the other is to exploit concurrency on multiple devices. We implemented prototypes in Linux and evaluate both policies in multiple workloads and multiple configurations. The results showed that the proposed approaches improve the performance significantly, and adapt to different configurations of the system under different workloads. The second part was to implement a file system on a special class of memory devices, Storage Class Memory (SCM), which is both byte addressable and also nonvolatile, e.g. PCM. We claimed that both the existing regular file systems and the memory based file systems are not suitable for SCM, and proposed a new file system, called SCMFS, which is implemented on the virtual address space. In SCMFS, we utilized the existing memory management module in the operating system to do the block management. Our design keeps address space within a file contiguous to reduce the block management software. The simplicity of SCMFS not only makes it easy to implement, but also improves the performance. We implemented a prototype of SCMFS in Linux and evaluated its performance through multiple benchmarks.

NVTM

NVTM
Author: Joel Coburn
Publisher:
Total Pages: 16
Release: 2009
Genre: Computer interfaces
ISBN:
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Advanced non-volatile, solid-state storage technologies such as phase change memory promise enormous gains in performance relative to both conventional disks and flash memory-based storage devices. However, existing abstractions for accessing non-volatile data (i.e., file systems and the associated system calls) cannot exploit the performance and flexibility these memories offer. We describe a new, transaction-based interface that allows programmers to implement fast, scalable, durable data structures that are robust in the face of unexpected system failures. The interface maps the non-volatile storage directly into the application's address space and allows volatile and non-volatile data structures to interact seamlessly in programs. Since the interface removes the operating system from the critical path of basic read and write operations, it can realize up to 2350X speedups relative to transactional storage systems that target the conventional file-based interface. We describe the system's internal operation, describe the support it requires from hardware, and quantify its performance.