A Design Study on the Scaling Limit of Ultra-thin Silicon-on-insulator MOSFETs

A Design Study on the Scaling Limit of Ultra-thin Silicon-on-insulator MOSFETs
Author: Wei-Yuan Lu
Publisher:
Total Pages: 124
Release: 2007
Genre:
ISBN: 9781109879605

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As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is considered as a potential candidate for achieving 10-nm CMOS. Fully-depleted SOI MOSFETs have several inherent advantages over bulk MOSFETs-low junction capacitance, no body effect and no need for body doping to confine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs.

Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology
Author:
Publisher: Newnes
Total Pages: 3572
Release: 2011-01-28
Genre: Science
ISBN: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

High Dielectric Constant Materials

High Dielectric Constant Materials
Author: Howard Huff
Publisher: Springer Science & Business Media
Total Pages: 740
Release: 2005
Genre: Science
ISBN: 9783540210818

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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Advances in Signal Processing and Communication

Advances in Signal Processing and Communication
Author: Banmali S. Rawat
Publisher: Springer
Total Pages: 627
Release: 2018-11-19
Genre: Technology & Engineering
ISBN: 9811325537

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This book is a collection of selected peer-reviewed papers presented at the International Conference on Signal Processing and Communication (ICSC 2018). It covers current research and developments in the fields of communications, signal processing, VLSI circuits and systems, and embedded systems. The book offers in-depth discussions and analyses of latest problems across different sub-fields of signal processing and communications. The contents of this book will prove to be useful for students, researchers, and professionals working in electronics and electrical engineering, as well as other allied fields.

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology
Author: Gang He
Publisher: John Wiley & Sons
Total Pages: 560
Release: 2012-08-10
Genre: Technology & Engineering
ISBN: 3527646361

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A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.